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Combined effects of hydrostatic pressure and electric field on the donor binding energy, polarizability, and photoionization cross-section in double GaAs/Ga\(_{1-x}\)Al\(_{x}\)As quantum dots

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Abstract

The present work focuses on the theoretical calculations of the ground-state binding energy of a shallow impurity, the impurity-related photoionization cross-section (PICS), and impurity-related polarizability under the combined effects of an electric field and hydrostatic pressure using a variational approach within the parabolic-band and effective-mass approximations. The low heterostructure is made up of two GaAs quantum dots separated by a Al\(_{0.3}\)Ga\(_{0.7}\)As central barrier. The applied electric field is considered to be directed along the growth-direction. As a general, the binding energy is obtained as a function of the impurity position and the electric field intensity. The PICS is calculated as a function of photon energy, for various impurity positions, with changes in hydrostatic pressure and/or electric field strength to prove their impact on their magnitude and shifting. Calculations are without accounting for the \(\Gamma -X\) effect of the GaAs/Al\(_{0.3}\)Ga\(_{0.7}\)As and for a specific nanostructure size. In addition, we have shown how variations in hydrostatic pressure and electric field affect the polarizability of impurities at three distinct places in the nanostructure.

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This manuscript has no associated data or the data will not be deposited. [Author’s comment: All the files with tables, figures, and codes are available. The corresponding author will provide all the files in case they are requested.]

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Acknowledgements

CAD is grateful to the Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia and projects “Propiedades magneto-ópticas y óptica no lineal en superredes de Grafeno”, “Estudio de propiedades ópticas en sistemas semiconductores de dimensiones nanoscópicas”, and “Propiedades de transporte, espintrónicas y térmicas en el sistema molecular ZincPorfirina”), and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD exclusive dedication project 2021-2022). CAD also acknowledges the financial support from El Patrimonio Autónomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnología y la Innovación Francisco José de Caldas (project: CD 111580863338, CT FP80740-173-2019).

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Authors and Affiliations

  1. Laboratory of Intelligent Systems, Georesources and Renewable Energies (SIGER), Faculty of Sciences and Technology, Sidi Mohamed Ben Abdellah University, 2202, Fez, Morocco

    Ayoub Ed-Dahmouny & Najia Es-Sbai

  2. Laboratory of Solid-State Physics, Department of Physics, Faculty of Science Dhar El Mahraz, Sidi Mohamed Ben Abdellah University, 1796, Fez, Morocco

    Ahmed Sali, Reda Arraoui, Mohammed Jaouane, Abdelghani Fakkahi & Kamal El-Bakkari

  3. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia

    C. A. Duque

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  1. Ayoub Ed-Dahmouny
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  2. Ahmed Sali
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Contributions

The contributions of the authors are as follows: Ayoub Ed-Dahmouny and C. A. Duque: worked on the numerical calculations, in formal analysis, and writing of the manuscript. Ahmed Sali: proposed the problem and worked on the numerical calculations and writing of the manuscript. Najia Es-Sbai: worked on the numerical calculations, in formal analysis, and writing of the manuscript. Reda Arraoui: worked on the formal analysis and writing of the manuscript. Mohammed Jaouane, Abdelghani Fakkahi and Kamal El-Bakkari: worked on the numerical calculations and writing of the manuscript.

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Correspondence to Ayoub Ed-Dahmouny.

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Ed-Dahmouny, A., Sali, A., Es-Sbai, N. et al. Combined effects of hydrostatic pressure and electric field on the donor binding energy, polarizability, and photoionization cross-section in double GaAs/Ga\(_{1-x}\)Al\(_{x}\)As quantum dots. Eur. Phys. J. B 95, 136 (2022). https://doi.org/10.1140/epjb/s10051-022-00400-2

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