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Magnetoresistance of Co2FeAl Films on the A-Plane of Sapphire

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Abstract

Co2FeAl (CFA) films with uniaxial magnetic anisotropy are obtained in ultrahigh vacuum using pulsed-laser evaporation on the A-plane of sapphire with a 10-nm seed layer of tungsten (110) epitaxially grown at a temperature of 450°C. The orientation of the crystallographic axes in the grown films is the same as for the growth of Fe (110) films on the same substrate. For some films, an inverse dependence of the anisotropic magnetoresistance is found, which may indicate implementation of the half-metal state. For other films from the same series, the inverse dependence is not observed since random factors, such as distortions of the lattice parameters, stresses in it, and various structural defects, can lead to loss of the half-metal properties.

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Funding

The study was supported by the State Program no. 007-00220-18-00.

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Authors and Affiliations

  1. Institute for Problems of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia

    L. A. Fomin, I. V. Malikov & V. A. Berezin

Authors
  1. L. A. Fomin
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  2. I. V. Malikov
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  3. V. A. Berezin
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Correspondence to L. A. Fomin or I. V. Malikov.

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We declare that we have no conflict of interest.

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Translated by S. Rostovtseva

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Fomin, L.A., Malikov, I.V. & Berezin, V.A. Magnetoresistance of Co2FeAl Films on the A-Plane of Sapphire. J. Surf. Investig. 16, 448–452 (2022). https://doi.org/10.1134/S1027451022040048

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