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Energy and Transport Lengths for Describing Volume of Resist Modification in Ion-Beam Lithography

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Abstract

One of the ways to use a focused ion beam in lithographic processes to create nanostructures is through the exposure of special sensitive materials, i.e., resists. As a result of exposure, the solubility of such a material increases (“positive” resist) or, conversely, decreases (“negative” resist). Subsequent selective irradiation and development of the resist make it possible to create a predetermined pattern on the substrate. This work is aimed at developing the theoretical foundations for this ion lithography method. A practically important case of stopping heavy ions in an organic resist, the average atomic mass of which is much less than the mass of the incident ion, is considered. Expressions for the “energy” and transport lengths of ions are obtained. The calculations are carried out assuming a power-law interaction potential. The “energy” length characterizes the depth of penetration of ions into the material, and the transport length is related to beam expansion due to scattering. Therefore, these lengths are the main characteristics of the zone in which the ion-beam energy is absorbed.

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Funding

The work was supported by the Ministry of Science and Education of the Russian Federation (State task no. 075-00355-21-00).

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Authors and Affiliations

  1. Institute of Microelectronics Technology Problems and High Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Russia

    Ya. L. Shabelnikova & S. I. Zaitsev

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  1. Ya. L. Shabelnikova
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  2. S. I. Zaitsev
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Correspondence to Ya. L. Shabelnikova.

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We declare that we have no conflicts of interest.

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Translated by G. Dedkov

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Shabelnikova, Y.L., Zaitsev, S.I. Energy and Transport Lengths for Describing Volume of Resist Modification in Ion-Beam Lithography. J. Surf. Investig. 16, 605–610 (2022). https://doi.org/10.1134/S1027451022040310

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