Issue 70, 2022
From the journal:

Chemical Communications

Direct growth of h-BN multilayers with controlled thickness on non-crystalline dielectric substrates without metal catalysts†

Xiaoyan Sun,a   Yuanfang Feng,a   Fei Wang,a   Peng Wang,a   Wei Gao ORCID logo *a  and  Hong Yin ORCID logo *a  

* Corresponding authors

a State Key Lab of Superhard Materials, College of Physics, Jilin University, Jilin, Changchun 130012, People's Republic of China
E-mail: hyin@jlu.edu.cn, gwei@jlu.edu.cn

Abstract

We report an rGO-assisted CVD approach that enables the direct growth of high-quality single crystalline h-BN films with adjustable thickness and layered order on amorphous quartz and SiO2/Si substrates at relatively low temperatures. This work demonstrates a viable prototype for growing continuous ultrathin h-BN films on desired substrates without the requirement of lattice orientation, thus offering a great opportunity for their appealing applications.

Graphical abstract: Direct growth of h-BN multilayers with controlled thickness on non-crystalline dielectric substrates without metal catalysts

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Article information

DOI
https://doi.org/10.1039/D2CC03025J
Article type
Communication
Submitted
28 May 2022
Accepted
02 Aug 2022
First published
03 Aug 2022

Chem. Commun., 2022,58, 9750-9753

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Direct growth of h-BN multilayers with controlled thickness on non-crystalline dielectric substrates without metal catalysts

X. Sun, Y. Feng, F. Wang, P. Wang, W. Gao and H. Yin, Chem. Commun., 2022, 58, 9750 DOI: 10.1039/D2CC03025J

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