Abstract
In this paper, two types of avalanche photodiode (APD) are compared, namely, a P-down APD using an inverted structure and a P-up APD using a conventional structure. Comparison between those two types of APD was made and differences between them were pointed out. We find that the inverted APD structure can prevent undesirable edge breakdown and improve high-speed performance. A maximum 3-dB bandwidth of 23 GHz and a gain–bandwidth product of 276 GHz are obtained for the P-down APD. For larger capacity applications, the P-down APD can play a greater role than the P-up APD.
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Nakajima, F., Nada, M., Yoshimatsu, T.: High-speed avalanche photodiode and high-sensitivity receiver optical subassembly for 100-gb/s ethernet. J. Lightwave Technol. 34(2), 243–248 (2016). https://doi.org/10.1109/JLT.2015.2464710
Nada, M., Yoshimatsu, T., Muramoto, Y., Yokoyama, H., Matsuzaki, H.: Design and performance of high-speed avalanche photodiodes for 100-gb/s systems and beyond. J. Lightwave Technol. 33(5), 984–990 (2015). https://doi.org/10.1109/JLT.2014.2377034
Nada, M., Yamada, Y., Matsuzaki, H.: Responsivity-bandwidth limit of avalanche photodiodes: toward future ethernet systems. IEEE J. Sel. Top. Quantum Electron. 24(2), 1–11 (2018). https://doi.org/10.1109/JSTQE.2017.2754361
Nada, M., Yamada, Y., Matsuzaki, H.: A high-linearity avalanche photodiodes with a dual-carrier injection structure. IEEE Photon. Technol. Lett. 29(21), 1828–1831 (2017). https://doi.org/10.1109/LPT.2017.2753262
Campbell, J.C.: Recent advances in telecommunications avalanche photodiodes. J. Lightwave Technol. 25(1), 109–121 (2007). https://doi.org/10.1109/JLT.2006.888481
Nada, M., Muramoto, Y., Yokoyama, H., Shigekawa, N., Ishibashi, T., Kodama, S.: Inverted InAlAs/InGaAs avalanche photodiode with low-high-low electric field profile. Jpn. J. Appl. Phys. 51(2S), 165–176 (2012). https://doi.org/10.1143/JJAP.51.02BG03
Nada, M., Muramoto, Y., Yokoyama, H., Matsuzaki, H.: High-speed high-power-tolerant avalanche photodiode for 100-gb/s applications. In: 2014 IEEE Photonics Conference, pp. 172–173 (2014). https://doi.org/10.1109/IPCon.2014.6995303. IEEE
Nada, M., Yoshimatsu, T., Nakajima, F., Sano, K., Matsuzaki, H.: A 42-ghz bandwidth avalanche photodiodes based on III–V compounds for 106-gbit/s pam4 applications. J. Lightwave Technol. 37(2), 260–265 (2019). https://doi.org/10.1109/JLT.2018.2871508
Campbell, J.C.: Recent advances in avalanche photodiodes. J. Lightwave Technol. 34(2), 278–285 (2016). https://doi.org/10.1109/JLT.2015.2453092
Nada, M., Muramoto, Y., Yokoyama, H., Ishibashi, T., Matsuzaki, H.: Triple-mesa avalanche photodiode with inverted p-down structure for reliability and stability. J. Lightwave Technol. 32(8), 1543–1548 (2014). https://doi.org/10.1109/JLT.2014.2308512
Nakajima, F., Nada, M., Yoshimatsu, T.: High-speed avalanche photodiode for 100-gbit/s ethernet. In: 2015 Optical Fiber Communications Conference and Exhibition (OFC), pp. 1–3 (2015). https://doi.org/10.1364/OFC.2015.M3B.5
Xiao, Y.G., Li, Z.Q., Li, Z.M.S.: Modeling of avalanche photodiodes by crosslight APSYS. In: Longshore, R.E., Sood, A. (eds.) Infrared and Photoelectronic Imagers and Detector Devices II, vol. 6294, pp. 281–288. SPIE (2006). https://doi.org/10.1117/12.681189 (International Society for Optics and Photonics)
Xiao, Y.G., Li, Z.Q., Li, Z.M.S.: Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by crosslight apsys. In: Dereniak, E.L., Hartke, J.P., Longshore, R.E., Sood, A.K. (eds.) Infrared Systems and Photoelectronic Technology II, vol. 6660, pp. 279–286. SPIE (2007). https://doi.org/10.1117/12.732682 (International Society for Optics and Photonics)
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This work was supported in part by the National Key Research and Development Program of China (2018YFB2200803).
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Liao, Z., Li, K., Liu, H. et al. Performance comparisons between inverted and conventional avalanche photodiodes for larger capacity applications. Opt Rev 29, 305–309 (2022). https://doi.org/10.1007/s10043-022-00746-z
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DOI: https://doi.org/10.1007/s10043-022-00746-z