Abstract
The effect of doping with nickel on the radiation stability of silicon solar cells has been studied within a γ-radiation dose range of 105–108 rad. It has been shown that the diffusion doping of silicon with impurity nickel atoms increases the radiation stability of the parameters of silicon solar cells. It is implied that a reason of increase in the radiation stability of such solar cells is the existence of clusters, which are composed of impurity nickel atoms and serve as sinks for radiation defects.
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ACKNOWLEDGMENTS
The authors are sincerely and profoundly grateful to Professor M.K. Bakhadyrkhanov for valuable advices given in the process of study and the discussion of obtained results.
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Ismailov, K.A., Kenzhaev, Z.T., Koveshnikov, S.V. et al. Radiation Stability of Nickel Doped Solar Cells. Phys. Solid State 64, 154–156 (2022). https://doi.org/10.1134/S1063783422040011
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DOI: https://doi.org/10.1134/S1063783422040011