Tuning magnetic anisotropy and Dzyaloshinskii-Moriya interaction via interface engineering in nonisostructural SrCuO2/SrRuO3 heterostructures

Xiaobing Chen, Jine Zhang, Banggui Liu, Fengxia Hu, Baogen Shen, and Jirong Sun
Phys. Rev. B 105, 214428 – Published 23 June 2022
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Abstract

We report a theoretical investigation on the effects of interface reconstruction on magnetic anisotropy (MA) and Dzyaloshinskii-Moriya interaction (DMI) for nonisostructural heterostructures formed by an infinite-layer oxide SrCuO2 and a perovskite oxide SrRuO3. Due to the atomic, charge, spin, and orbital reconstructions at interface, the SRO film thickness-dependent magnetic anisotropy oscillation behavior has been greatly tuned in two SrCuO2/SrRuO3 heterostructures. A strong DMI of 3.5 meV/Ru and a large DMI/exchange constant ratio |D/J| of 0.63 are obtained at the CuO2SrRuO2 interface, which are beneficial to the creation and stability of skyrmions. Besides, the DMI is tunable, monotonically decreasing with the increase of the content of the apical oxygen ions in the interfacial layer, and takes the minimal value of 0.1 meV/Ru at the CuO2SrORuO2 interface. We evaluate the formation energy of oxygen vacancy in interface SRO layer, which turns out to be half as much as that in bulk SRO. This small value ensures the experimental feasibility towards two interfaces. Combining first-principles calculations with tight-binding model, we find that the effectively modulated MA and DMI at the CuO2SrRuO2 interface are mainly associated with the occupation of d3z2r2 orbital, the enhanced interface symmetry breaking, and orbital hybridization. The present work demonstrates the distinct features of the interface formed between nonisostructural oxides and suggests a conceptually different strategy towards the modulation of MA and DMI.

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  • Received 2 November 2021
  • Revised 30 May 2022
  • Accepted 8 June 2022

DOI:https://doi.org/10.1103/PhysRevB.105.214428

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xiaobing Chen1,2,*, Jine Zhang3,*, Banggui Liu1,2, Fengxia Hu1,2,4, Baogen Shen1,2,4, and Jirong Sun1,2,4,5,†

  • 1Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
  • 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
  • 3School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
  • 4Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
  • 5Spintronics Institute, University of Jinan, Jinan, Shandong 250022, People's Republic of China

  • *These authors contributed equally to this work.
  • Corresponding author: jrsun@iphy.ac.cn

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Issue

Vol. 105, Iss. 21 — 1 June 2022

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