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First-principles study of InxGa1-xAs1-yPy with different compositions

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Abstract

Methods

The bulk properties of InxGa1-xAs1-yPy at different In and P compositions are calculated using the first-principles methods.

Results

The bandgap of InxGa1-xAs1-yPy is theoretically calculated and the formula is given. The calculated bandgap change of InxGa1-xAs1-yPy is consistent with the theoretical value, which indicates that the calculation parameters are reasonable.

Conclusion

When the In and P compositions are equally increased, the bandgap change of InxGa1-xAs1-yPy is no longer monotonic, and the closer the In and P compositions approach 0.6, the narrower the bandgap is. When the incident photon energy is low, an increase in In composition leads to a redshift in dielectric function peak and this is conducive to long-wavelength absorption, while an increase in P composition causes a blueshift. As the incident photon energy increases, InxGa1-xAs1-yPy exhibits strong metal reflection characteristics in a certain energy range. With increasing In or P composition, the energy loss increases, and the larger the In composition, the greater the shift of the energy loss peak to the high-energy side.

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Acknowledgements

This work was financed by the National Natural Science Foundation of China (Grant No. 61971386), Public Welfare project of Ningbo City (202002N3139, 2019C10051).

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Authors and Affiliations

  1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing, 210094, China

    Yong Wang, Jianxin Li, Junju Zhang & Weiwei Sha

  2. Ningbo University of Finance and Economics, Ningbo, 315000, Zhejiang, China

    Weipeng Zhang

  3. Department of Opto-Electric Engineering, Binzhou University, Binzhou, 256603, China

    Yujie Du

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  1. Yong Wang
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Correspondence to Junju Zhang.

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Wang, Y., Li, J., Zhang, J. et al. First-principles study of InxGa1-xAs1-yPy with different compositions. Opt Rev 29, 287–297 (2022). https://doi.org/10.1007/s10043-022-00742-3

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