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A High Voltage CMOS Voltage Level Converter for a Low Voltage Process

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Abstract

A new high-voltage CMOS voltage level converter designed for manufacturing in low-voltage technological processes is presented. The features of the construction, operation and application of a high-voltage CMOS converter using low-voltage transistors are described. The new high-voltage CMOS voltage level converter is compared with its analog in terms of dynamic characteristics. The described high-voltage voltage level converter, in comparison with the alternative circuit, has a higher response speed (~14% in the worst case), and also allows us to form a higher quality output waveform with the minimal distortion.

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REFERENCES

  1. Kursun, V. and Friedman, E.G., Multi-Voltage CMOS Circuit Design, Chichester, West Sussex: Wiley, 2006.

    Book  Google Scholar 

  2. Ker, M.-D. and Hsu, K.-C., Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS intergrated circuit, IEEE Trans. Dev. Mater. Reliab., 2005, vol. 5, no. 2, pp. 235–249.

    Article  Google Scholar 

  3. Shibata, N., Kiya, H., Kurita, S., Okamoto, H., Tan’no, M., and Douseki, T., A 0.5-V 25-MHz 1-mW 256-Kb MTCMOS/SOI SRAM for solar-power-operated portable personal digital equipment - sure write operation by using step-down negatively overdriven bitline scheme, IEEE J. Solid-State Circuits, 2006, vol. 41, no. 3, pp. 728–742.

    Article  Google Scholar 

  4. Tilke, A., Pescini, L., Stiftiner, M., Kakoschke, R., Shum, D., Chan, N., Kim, S., Hecht, V., and Han, K.J., Highly scalable embedded flash memory with deep trench isolation and novel buried bitline integration for the 90-nm node and beyond, IEEE Trans. Electron Dev., 2007, vol. 54, no. 7, pp. 1681–1688.

    Article  Google Scholar 

  5. Otsuka, N. and Horowitz, M., Circuit techniques for 1.5 V power supply flash memory, IEEE J. Solid-State Circuits, 1997, vol. 32, no. 8, pp. 1217–1230.

    Article  Google Scholar 

  6. Koo, K.-H., Seo, J.-H., Ko, M.-L., et al., A new level-up shifter for high speed and wide range interface in ultra deep sub-micron, in Proceedings of the IEEE International Symposium on Circuits and Systems, 2005, vol. 2, pp. 1063–1065.

  7. Kumar, M., Arya, S.K., and Pandey, S., Level shifter design for low power applications, Int. J. Comput. Sci. Inform. Technol., 2010, vol. 2, no. 5, pp. 124–132.

    Google Scholar 

  8. Tan, S.C. and Sun, X.W., Low power CMOS level shifters by bootstrapping technique, Electron. Lett., 2002, vol. 38, no. 16, pp. 876–878.

    Article  Google Scholar 

  9. Zhang, B., Liang, L., and Wang, X., A new level shifter with low power in multi-voltage system, in Proceedings of the IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 2006, pp. 1857–1859.

  10. Gupta, Sh. and Kumar, M., CMOS voltage level-up shifter—a review, Int. J. Adv. Eng. Sci., 2013, vol. 3, no. 3.

  11. Baker, J.R., CMOS. Circuit Design, Layout, and Simulation, New York: Wiley-IEEE, 2005, 2nd ed.

    Google Scholar 

  12. Rabaey, J.M., Chandrakasan, A., and Nikolic, B., Digital Integrated Circuits: A Design Perspective, Englewood Cliffs, NJ: Prentice Hall, 2002, 2nd ed.

    Google Scholar 

  13. Lee, W.K., CMOS digital level shift circuit, US Patent no. US6099100A, 2008.

  14. Pan, D., Li, H.W., and Wilamowski, B.M., A low voltage to high voltage level shifter circuit for MEMS application, in Engineering Proceedings of the IEEE 15th Biennial University/Government/Industry Microelectronics Symposium, Boise, ID, USA, June 30–July 2, 2003, 2003, cat. no. 03CH37488.

  15. Shubin, V.V., Glukhov, A.V., Bykov, V.M., and Egorkin, A.V., High voltage level converter, RF Patent no. 2712422, 2020.

  16. Shubin, V.V., High voltage level converter, RF Patent no. 2702979, 2019.

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Shubin, V.V. A High Voltage CMOS Voltage Level Converter for a Low Voltage Process. Russ Microelectron 51, 155–163 (2022). https://doi.org/10.1134/S1063739722020081

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  • DOI: https://doi.org/10.1134/S1063739722020081

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