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Quantum Effects on Modulational Amplification Characteristics of Semiconductor Magneto-Plasmas

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Abstract

Using quantum hydrodynamic model, quantum effects (via Bohm potential) on modulational amplification characteristics of semiconductor magneto-plasmas are investigated. Expressions are obtained for the threshold pump amplitude and the growth rate of modulated beam with including and excluding quantum effects. Numerical analysis is performed for n-InSb/CO2 laser system. The dependence of the threshold pump amplitude and the growth rate of modulated beam on wave number, applied magnetic field, and plasma carrier concentration are explored. The lowering in threshold pump amplitude and enhancement of growth rate of modulated beam are observed by incorporating the quantum effects. The analysis provides detailed information of quantum effects on semiconductor magneto-plasmas and establishes the technological potentiality of semiconductor magneto-plasmas as the hosts for fabrication of efficient optical modulators.

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Acknowledgements

The authors are very thankful to Prof. Sib Krishna Ghoshal, Department of Physics, Universiti Teknologi, Malaysia, for many useful suggestions to carry out this work and careful reading of the final draft.

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No funding support from any funding agency was received to carry out this research work.

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Authors and Affiliations

  1. Department of Physics, Lords University, Chikani, Alwar, Rajasthan, 301028, India

    Devender Singh & B. S. Sharma

  2. Department of Physics, Government College, Matanhail, Jhajjar, Haryana, 124106, India

    Devender Singh & Manjeet Singh

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  1. Devender Singh
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  2. B. S. Sharma
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  3. Manjeet Singh
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Correspondence to Devender Singh.

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The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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Singh, D., Sharma, B.S. & Singh, M. Quantum Effects on Modulational Amplification Characteristics of Semiconductor Magneto-Plasmas. Iran J Sci Technol Trans Sci 46, 999–1009 (2022). https://doi.org/10.1007/s40995-022-01301-w

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  • DOI: https://doi.org/10.1007/s40995-022-01301-w

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