Abstract
Topological phononic crystals can manipulate elastic waves that propagate in solids without being backscattered, and could be used to develop integrated acousto-electronic systems for classical and quantum information processing. However, acoustic topological metamaterials have been mainly limited to macroscale systems that operate at low (kilohertz to megahertz) frequencies. Here we report a topological valley Hall effect in nanoelectromechanical aluminium nitride membranes at gigahertz (up to 1.06 GHz) frequencies. We visualize the propagation of elastic waves through phononic crystals with high sensitivity (10–100 fm) and spatial resolution (10–100 nm) using transmission-mode microwave impedance microscopy. The valley Hall edge states, which are protected by band topology, are observed in both real and momentum space. Robust valley-polarized transport is evident from wave transmission across local disorder and around sharp corners. We also show that the system can be used to create an acoustic beamsplitter.
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The raw data that support the findings of this study are available from the corresponding authors upon reasonable request.
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Acknowledgements
A.T.C.J., Q.Z. and Z.G. acknowledge support by the NSF through the Laboratory for Research on the Structure of Matter, an NSF Materials Research Science & Engineering Center (MRSEC; DMR-1720530). K.L., D.L., L.Z., X.M. and S.I.M. acknowledge support by the NSF’s Division of Materials Research award DMR-2004536 and Welch Foundation grant F-1814 for the TMIM work. Data analysis was partially supported by the NSF through the Center for Dynamics and Control of Materials, an NSF MRSEC under Cooperative Agreement DMR-1720595. This work was carried out in part at the Singh Center for Nanotechnology, which is supported by the NSF National Nanotechnology Coordinated Infrastructure Program under grant NNCI-2025608. B.Z. and L.H. acknowledge support for the metamaterial design and simulation work by the US Office of Naval Research (ONR) Multidisciplinary University Research Initiative (MURI) grant N00014-20-1-2325 on Robust Photonic Materials with High-Order Topological Protection and grant N00014-21-1-2703. H.Y. acknowledges support of the National Natural Science Foundation of China (grant no. 11974003). We would like to express our appreciation for useful discussions with T. Olsson and Q. Niu.
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A.T.C.J. and K.L. conceived the project. Q.Z. fabricated the phononic devices and performed the band-structure simulations. D.L. and L.Z. performed the TMIM imaging and data analysis. X.M. and S.I.M. contributed to the TMIM data analysis. L.H., Z.G., H.Y. and B.Z. contributed to the phononic crystal design. Q.Z., D.L. and K.L. drafted the manuscript with contributions from all the authors. All the authors have given approval to the final version of the manuscript.
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Nature Electronics thanks Yan-Feng Chen, Zhengyou Liu and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
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Zhang, Q., Lee, D., Zheng, L. et al. Gigahertz topological valley Hall effect in nanoelectromechanical phononic crystals. Nat Electron 5, 157–163 (2022). https://doi.org/10.1038/s41928-022-00732-y
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DOI: https://doi.org/10.1038/s41928-022-00732-y
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