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Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

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Abstract

This paper proposes the Asymmetric Double Gate Silicon Substrate HEMT (ADG-Si-HEMT) to study the carrier concentration and intrinsic small signal parameters of the InSb/AlInSb silicon wafer DG-HEMT device. The HEMTs work as a three-port system and the device is named Asymmetric Double Gate HEMT when the top and bottom gates are biased with different gate voltages. The position of quasi-Fermi energy levels (Ef) is used to investigate the modulation of back-channel charge density caused by the front gate voltage. Also, the small signal model is obtained for a various parameters such as cut off frequency, gate to source capacitance and transconductance. To enhance device operation, the effects of the following factors are being investigated delta doping, drain current for various top and bottom gate voltages. The transconductance 2390 Sm/mm for Vfg = 0.2 V and cut off frequency around 197 GHz for Vbg = 0.3 are obtained. The analytical results are compared to the results of the Sentaurus 3-D TCAD simulation. Because of the variation in threshold voltage and modifying carrier density in dual channels, the asymmetric biassing approach has a wide range of mixed applications.

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There are no linked research data sets for this submission. The following reason is given: No data was used for the research described in the article.

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The authors of the manuscript did not receive any funding, grants, or in-kind support in support of the research or the preparation of the manuscript.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Nadar Saraswathi College of Engineering and Technology, Vadapudupatti, Theni Allinagaram, Tamil Nadu, 625531, India

    T. Venish Kumar

  2. School of Electronics and Communication Engineering, REVA University, Bengaluru, Karnataka, 560064, India

    M. Venkatesh

  3. Department of Electronics and Communication Engineering, Sethu Institute of Technology, Virudhunagar, Tamil Nadu, 626115, India

    B. Muthupandian

  4. School of Electronics Engineering (SENSE), VIT University, Chennai, Tamil Nadu, 600127, India

    G. Lakshmi Priya

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  4. G. Lakshmi Priya
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Contributions

Author 1 (T.Venish Kumar): Conceived and design the analysis, contributed data,analysis tools, and wrote the paper. Author 2 (M.Venkatesh): Performed the analysis, calibrated the results, and wrote the paper. Author 3 (B.Muthupandian): Worked in the TCAD portion of the proposed device and analytical Modeling. Author 4 (G.Lakshmi Priya): Worked in TCAD simulation of drain current modeling, and wrote the paper for the corresponding portion.

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Correspondence to T. Venish Kumar.

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All authors have participated in (a) conception and design, or analysis and interpretation of the data; (b) drafting the article or revising it critically for important intellectual content; and (c) approval of the final version. This manuscript has not been submitted to, nor is under review at, another journal or other publishing venue. The authors have no affiliation with any organization with a direct orindirect financial interest in the subject matter discussed in the manuscript.

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• All authors have participated in (a) conception and design, or analysis and interpretation of the data; (b) drafting the article or revising it critically for important intellectual content; and (c) approval of the final version.

• This manuscript has not been submitted to, nor is under review at, another journal or other publishing venue.

• The authors have no affiliation with any organization with a direct or indirect financial interest in the subject matter discussed in the manuscript

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Kumar, T.V., Venkatesh, M., Muthupandian, B. et al. Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications. Silicon 14, 6009–6018 (2022). https://doi.org/10.1007/s12633-021-01383-y

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