Conclusion
We develop a unified hybrid compact model of a different structure β-Ga2O3 SBDs for full-wave rectifier and mixer applications. The model results are compared with experimental data, and a good match was attained. Its SPICE-compatibility for circuit simulation is demonstrated in the rectifier and mixer. Considering the universality of this model, it can be practical to characterize β-Ga2O3 SBDs with other structures and further evaluate their performance in various circuits.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 61925110, 62004184, 62004186, 51961145110), MOST of China (Grant No. 2018YFB0406504), Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSWJSC048), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002).
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Zhou, K., He, Q., Jian, G. et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci. China Inf. Sci. 64, 219403 (2021). https://doi.org/10.1007/s11432-021-3224-2
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DOI: https://doi.org/10.1007/s11432-021-3224-2