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Monovalent and Divalent Impurity States in a Semiconductor Nanoplatelets

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

Hydrogen-like impurity states in a semiconductor nanoplatelets in the shape of a rectangular parallelepiped of small thickness are investigated within the framework of the variational method. It is shown that, due to the small thickness of the nanostructure, the impurity can be considered two-dimensional one. In the case of a divalent impurity, the electron-electron interaction is also considered two-dimensional and taken into account as a perturbation. By analogy with the theory of the helium atom, the energy of the electron-electron interaction for the para-state is determined.

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ACKNOWLEDGMENTS

The authors are deeply grateful to Dr. D. Baghdasaryan for useful discussions.

Funding

This work was carried out within the framework of the program No. 10-2/I-5 of basic funding from the CC of the Republic of Armenia.

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Correspondence to H. A. Sarkisyan.

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The authors declare no conflict of interest.

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Translated by V.M. Aroutiounian

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Harutyunyan, V.A., Sarkisyan, H.A. Monovalent and Divalent Impurity States in a Semiconductor Nanoplatelets. J. Contemp. Phys. 56, 228–233 (2021). https://doi.org/10.3103/S1068337221030051

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  • DOI: https://doi.org/10.3103/S1068337221030051

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