Issue 39, 2021

Exploring the phase space of Zn2SbN3, a novel semiconducting nitride

Abstract

The novel semiconductor Zn2SbN3 is one of a growing list of ternary nitrides with promise for optoelectronic and energy applications. Previous work by Arca et al. [Materials Horizons, 2019, 6, 1669–1974] first reported synthesis of this material, but did not explore the effects of growth conditions on material formation. In this work, we present a semi-automated study of the relationship between growth conditions and crystallinity via high-throughput RF sputtering and a custom X-ray diffraction analysis routine. Zn2SbN3 is found to crystallize in a wide range of growth conditions, and the formation of several contaminant phases is examined. Electron microscopy of these secondary phases, caused both by off-stoichiometry and by growth conditions, provides insight into the growth mechanisms of Zn2SbN3. Computational work relates this material to other Zn-based ternary nitrides and offers an explanation for the difficulty of growing cation-ordered material despite the wide range of growth conditions explored.

Graphical abstract: Exploring the phase space of Zn2SbN3, a novel semiconducting nitride

Supplementary files

Article information

Article type
Paper
Submitted
30 Jun 2021
Accepted
23 Aug 2021
First published
25 Aug 2021

J. Mater. Chem. C, 2021,9, 13904-13913

Author version available

Exploring the phase space of Zn2SbN3, a novel semiconducting nitride

A. Mis, S. Lany, G. L. Brennecka and A. Tamboli, J. Mater. Chem. C, 2021, 9, 13904 DOI: 10.1039/D1TC03056F

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