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Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors

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Abstract

In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d33) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d33 was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.

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Acknowledgements

The authors acknowledge Defence Materials and Stores Research and Development Establishment (DMSRDE), DRDO for supplying the LPCS and Aeronautics Research and Development Board for sponsoring the research under grant no ARDB-012031838/M/I.

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Authors and Affiliations

  1. CSIR- Central Glass and Ceramic Research Institute, 196, Raja, S.C. Mullick Road, Jadavpur, Kolkata, 700032, India

    Kusumita Kundu, Shewli Pratihar, Tarun Kumar Kayal & Rajat Banerjee

  2. Academy of Scientific and Innovative Research(AcSIR), Ghaziabad, 201002, India

    Kusumita Kundu, Tarun Kumar Kayal & Rajat Banerjee

  3. University of Engineering and Management, Kolkata, 700156, India

    Arnab Ghosh

  4. Department in Electrical Engineering, Indian Institute of Technology, Hyderabad, Telengana, 502285, India

    Shiv Govind Singh

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  1. Kusumita Kundu
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  2. Arnab Ghosh
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  4. Shiv Govind Singh
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Correspondence to Rajat Banerjee.

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Kundu, K., Ghosh, A., Pratihar, S. et al. Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors. J Mater Sci: Mater Electron 32, 25108–25117 (2021). https://doi.org/10.1007/s10854-021-06966-4

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