Fast high-fidelity spin readout in the singlet-triplet basis using a resonator and tailored pulses

Xing-Yu Zhu, Tao Tu, Ao-Lin Guo, Guang-Can Guo, and Chuan-Feng Li
Phys. Rev. A 104, 032409 – Published 10 September 2021

Abstract

Electron spins in semiconductor quantum dots are a promising platform for qubits. An essential step toward quantum error correction with spin qubits requires the ability to read out states and identify errors in the two-spin logical basis in a fast and high-fidelity way. Here we propose a scheme for spin singlet-triplet readout in a double quantum dot, with a superconducting resonator serving as the detector. Making use of a spin driving pulse sequence, this procedure can read out the spin states with a fidelity of 99.9% in a time 100 ns. Interestingly, this method makes use of the spin driving pulse to adjust the resonator signal field, leading to significant improvement of the spin readout. In addition, this method can be directly applied to multiplexed readout of qubits and repeated readout to identify logical errors. These results pave the way for the implementation of quantum error correction and scalable quantum processor with spin qubits.

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  • Received 1 February 2021
  • Revised 12 August 2021
  • Accepted 19 August 2021

DOI:https://doi.org/10.1103/PhysRevA.104.032409

©2021 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalCondensed Matter, Materials & Applied PhysicsQuantum Information, Science & Technology

Authors & Affiliations

Xing-Yu Zhu1,2,3, Tao Tu1,2,*, Ao-Lin Guo1,2, Guang-Can Guo1, and Chuan-Feng Li1,†

  • 1Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei 230026, People's Republic of China
  • 2Department of Physics and Astronomy, University of California at Los Angeles, California 90095, USA
  • 3School of Mechanical and Electronic Engineering, Suzhou University, Suzhou 234000, People's Republic of China

  • *tutao@ustc.edu.cn
  • cfli@ustc.edu.cn

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Issue

Vol. 104, Iss. 3 — September 2021

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