Abstract
The gate material work function engineering and hetero-dielectric engineering concepts are discussed in this paper to design a novel triple material DG Tunnel FET. The three different work functions and the hetero-dielectric material within the transistor control the charge carrier density in the source, drain, and channel region. The heterojunction germanium and silicon material in the source-channel junction improve tunneling based on the bandgap engineering. The hetero-dielectric materials, namely high–K material in the source region and low-K material in the drain region, suppress the gate-to-drain capacitance effect, enhancing the cut-off frequency. The increased tunneling enhances the ON current, and the tri material restricts the reverse tunneling, which suppresses the ambipolar behaviour of the TFET. The electrical characteristics like surface potential, electric field, drain current, transconductance, and cut-off frequency of the TMDG TFET are simulated using TCAD simulation. Also, results validate the suitable selection of the doping concentration in the source, drain region and different tri-gate work function values for the proposed TMDG TFET. The proposed device shows remarkable progress in ON current of the order (10− 3 A/µm) and the leakage current in Femto range (10− 17 A/µm), with the ION/IOFF current ratio of 1014. The proposed structure is suitable for low-power applications.
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Acknowledgements
The author would like to thank Dr. L. Arivazhagan for interesting discussion on the device physics and simulation setup.
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Writing - literature search and analysis, original draft preparation: [C. Sheeja Herobin Rani] [R. Solomon Roach], Idea of the article, Resources [T. S. Arun Samuel], Checked the comparison results and validation: [S. Edwin Lawrence]
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Rani, C.S.H., Roach, R.S., Samuel, T.S.A. et al. Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET. Silicon 14, 5827–5834 (2022). https://doi.org/10.1007/s12633-021-01355-2
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DOI: https://doi.org/10.1007/s12633-021-01355-2