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The Effect of Thermal Treatment on the Thermoelectric Figure of Merit of Silicon Doped Using Nuclear Transmutation

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Abstract—

This work is devoted to the thermal treatment effect peculiarities on the electric and thermoelectric characteristics of silicon crystals doped with a phosphorus impurity using nuclear transmutation and (for comparison) common metallurgical methods. It was found that, to obtain optimal values of the thermoelectric figure of merit Za in n-Si crystals doped by the method of the nuclear transmutation, they must be annealed at 1100–1200°С for 2 h, whereas the annealing of the same duration, but at lower temperatures, has to be used for ordinary n-Si crystals. In both cases, higher values of the thermoelectric figure of merit were obtained at cooling the crystals from the annealing temperature to room temperature at a rate of 1°С/min.

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  1. Institute for Nuclear Research, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine

    G. P. Gaidar

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  1. G. P. Gaidar
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Translated by M. Baznat

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Gaidar, G.P. The Effect of Thermal Treatment on the Thermoelectric Figure of Merit of Silicon Doped Using Nuclear Transmutation. Surf. Engin. Appl.Electrochem. 57, 425–430 (2021). https://doi.org/10.3103/S1068375521040037

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  • DOI: https://doi.org/10.3103/S1068375521040037

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