From carbon nanotubes to highly adaptive and flexible high-performance thermoelectric generators
Graphical Abstract
The AF-TEG based on a 3-level structure principle using industrial CNT films is designed to harvest low-grade waste heat for powering the microelectronics, meanwhile the power management scheme was proposed to regulate the thermoelectric voltage for practical application.
Introduction
Renewable energy sources such as waste heat have attracted much attention in response to the current increasing demands for electricity and depletion of fossil fuels [1], [2]. However, most of thermal energy such as solar heat, body heat, and engineering heat diffuses into the ambient atmosphere invalidly. Flexible thermoelectric generators (TEGs) with all-weather thermal conversion capability enable directly harvest such waste heat from curvilinear surfaces into electricity noiselessly, thereby improving energy efficiency through waste heat recovery [3]. In addition, the thermal energy harvesting technology provides a reliable solution for energy requirements in the field of flexible and portable microelectronics because of sustainable power-supply characteristics [4].
Thorough investigations have been implemented in developing high-performance flexible TEGs over recent decades [2], [5], [6], [7], [8], [9], [10]. Among thermoelectrics, ion TEGs with a capacitive configuration, including liquid-state thermocells and ion gelatin, enable produce substantial voltage by harvesting low-grade heat [11], [12]. However, the redox reactions or thermodiffusion that occurs under temperature gradients in these ionic systems usually lead to electrode corrosion, resulting in reduced working life. Besides, the encapsulation and stability are shortcomings in use that need to be addressed. Alternatively, all-solid-state flexible TEGs continuously generate electricity via the migration of electrons or holes without any chemical reactions, which support more reliable use in reality. Compared with the flexible TEGs based on block materials, devices integrated with flexible TE materials have higher curvature adaptability and wearing comfort, and therefore have a broader development prospect. Recently, Zhou and coworker [13] reported a leaf-inspired flexible TEGs fabricated by using p-type PEDOT:PSS film and n-type constantan alloy thin film, which is capable of directly capturing the body's heat energy by vertically standing on the skin. Lv et al. [14] used single-wall carbon nanotube films to build spring-shaped wearable TED with fundamental dual elastomer layers. Furthermore, all-solid-state flexible material-based TEGs (AF-TEGs) can be fabricated using earth-abundant element, for example of carbon, making AF-TEGs inexpensive in the future [7], [15]. However, from the practical perspective of thermoelectric (TE) conversion, the output from 24 to 123 mV or 10 to 173 μW of the state-of-the-art AF-TEG at a ΔT of 5.2–18.5 K, to the best of our knowledge, still hardly meets the practical requirements of microelectronics [4].
The challenges encountered in the sufficient performance of AF-TEGs mainly focus on two aspects: High-density integration of TE legs, and scalable fabrication of high-performance flexible TE materials [3], [7]. First, although high-density integration corresponds to a theoretically linear augment in open-circuit voltage [16], the increased TEG area and resistance associated with internal metal electrodes across the device are still obstruction in real use. Second, advances in integration of massive TE legs enhance the aggressive requirements of the large-area TE materials with robust TE properties [3], but the existing TE materials fabricated using vacuum-assisted filtration, printing technology, and so on are not sufficient to enable the industrial production for high-density integrated generators [17], [18]. In the face of these challenges, a necessary solution is to obtain low-cost and large-area TE materials that are facilely integrated into high-density flexible TE devices.
Carbon nanotubes (CNTs) are especially attractive for the great potential use in AF-TEGs, as their energy bands are readily adjustable, as well as the inherent flexibility in nature and scalable preparation [5], [19], [20]. In addition, the semiconductor characteristic of CNTs can be modified via simple physical adsorption or chemical treatments, such as coating and annealing, which is conducive to achieving n-type characteristic and excellent TE performance [21]. To date, however, most design strategies for CNT-based TEGs still involve alternatively connecting p- and n-type legs via depositing metals or fixing wires [22], [23]. Compared to the bare TE legs, the conformation of the TE leg-metal bridge-TE leg (TMT) offers a limited possibility to promote the multi-pair integration of the AF-TEGs because of its expanded device volume. Especially for the double-interfaces in each TMT unit, electrical performance decay on account of increasing contact resistance severely limits the output power density of the AF-TEGs [5], [24], [25]. Therefore, the traditional TMT geometry capable of power generation is not definitely suitable for CNT-based AF-TEGs. Innovative strategies that optimize the unit configuration rolled into a generator yielding the decreasing metal bridges are urgently needed for an AF-TEG with sufficient power output that sustainably, directly powers microelectronics.
To confront the aforementioned challenges, we propose a 3-level structure principle for constructing the high-performance AF-TEG using CNT films as the precursors. First, we employed large-scale p- and n-type materials modified from thin-film CNTs assemblies in producing 1st-level TE units, in order to form an all-CNT single-interface in individual unit instead of traditional double-interface structure for reducing the resistance. Second, the flexible 2nd-level TE films were built by hot-pressing TE units electrically in series and thermally in parallel to guarantee multiple TE couples for high-density integration. Third, the 2nd-level TE films were further constructed into a highly adaptive, light-weight AF-TEG as 3rd-level structure for realizing ultra-high-power density. Owing to above designs, this AF-TEG comprising ten 2nd-level TE films is capable of twisting or folding into three-dimensional (3D) direction from 2D structure, has ability to harvest diverse waste heat from multiple surfaces, such as human body. This design strategy has the other advantage that it is naturally compliant nature of LEGO-style to add the TE units directly, thereby facilitating a maximized open circuit voltage of 1.05 V at a ΔT of ~44 K. For practical use, our AF-TEG exhibits significant capability in powering an electrochromic device at ΔT ≈ 32 K, demonstrating a beneficial prospect as a self-powered smart window for regulating internal light intensity and temperature by colour-change in the future. We further explored the power management technology based on the AF-TEG: a thermal voltage was converted from 0.35 to ~4 V using a power management technology to successfully power a commercial light emitting diode (LED) and an electronic thermometer. Overall, this truly adaptive AF-TEG provides a propagable and practical solution for the recovery of low-grade heat and energy supply for microelectronics.
Section snippets
Materials
FeCl3•6H2O (≥ 99.0%) and anhydrous alcohol (≥ 99.7%) were purchased from the Sinopharm Chemical Reagent Co., Ltd., China. PEI (M.W = 600, ≥99%) was purchased from Aladdin Industrial Corp (Shanghai, China). All chemicals were used as received without any further purification. The Multi-walled CNT (MWCNT) films were synthesized by the Floating Catalyst Chemical Vapor Deposition (FCCVD) Method. The PVDF films were purchased from Suzhou Zeyou Fluoroplastic Material Technology Co., Ltd., China.
The preparation of functionalized CNT films
For
p- and n- functionalization of CNT films
The p- and n-type CNT films were achieved by mild non-covalent functionalization, where the functionalization mechanism and structural characterization of the p- and n-type CNT films are presented in Fig. 1. Herein, the large-scale CNT films with continuous conductive networks were used for functionalization, as shown in Figs. 1a and S3. Our modified solvent bath provides the possibility of developing large-area modified CNT films for commercial applications (Fig. S1). For the n-type doping,
Conclusions
We have demonstrated a prototype of a highly adaptive AF-TEG based on all-CNT single-interface TE films with an exceptional power output and power density. The AF-TEG consisting of 10 TE films can generate a voltage of 1.05 V at ΔT ≈ 44 K and a power output of 0.95 mW at ΔT ≈ 39 K. Particularly, a demo based on the 3rd-level AF-TEG is obtained for powering an electrochromic device, proving its potential usability on buildings or automobiles as a self-powered smart window for reducing energy
CRediT authorship contribution statement
Bo Wu: Investigation, Methodology, Data curation, Writing – original draft. Yang Guo: Methodology, Data curation, Writing – review & editing. Chengyi Hou: Formal analysis, Validation, Supervision, Writing – review & editing, Funding acquisition. Qinghong Zhang: Validation, Investigation. Yaogang Li: Conceptualization, Writing – review & editing, Funding acquisition. Hongzhi Wang: Conceptualization, Supervision, Project administration.
Declaration of Competing Interest
The author declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Acknowledgements
This work was supported by the National Natural Science Foundation of China (No. 51873033 and No. 52073057), the Fundamental Research Funds for the Central Universities (2232020A-01 and 2232019A3-02), DHU Distinguished Young Professor Program (LZB2019002), Shanghai Rising-Star Program (20QA1400300), and the Fundamental Research Funds for the Central University and Graduate Student Innovation Fund of Donghua University (CUSF-DH-D-2020033).
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