Abstract
A simple and inexpensive metal-catalyzed technique has verified the efficiency of texturing p-type Si wafer at room temperature. This method facilitates the etching of p-type silicon in a solution of HF with the assistance of addition HNO3 as an oxidizing agent to the solution. Electroless deposition of Ag was accomplished on p-type Si (100) surface before immersion in the etchant solution. The physical properties of the porous silicon (P–Si) layer produced as a function of etching time were investigated through various instruments. The nanopores parameters, the average crystallite sizes besides the other micro-structural parameters were calculated for each etching time employing by X-ray diffraction (XRD) technique. The nanopores layer was formed on the surface of Si owing to Ag-enhanced chemical etching of P–Si in an aqueous 11 M HF/0.5 M HNO3 solution. Scanning electron microscopy (SEM), atomic force microscopy (AFM) studied the topographic and roughness of the surface of P–Si. Alternatively, the investigated spectra illustrate that the deposited silver diffuses into the pore while the porosity of P–Si was etching time-dependent in the range of (3.23, 6.01, and 16.12%) for 15, 30 and 60 min, respectively. The contact angles measurements show the hydrophilic nature of the prepared samples. Electrochemical impedance spectroscopy (EIS) shows the electrical equivalent circuit that fitted to the experimental impedance results of the metal-modified silicon surface in an aqueous solution of HF/oxidizing agent.
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ACKNOWLEDGMENTS
Mustafa Shalaby acknowledges Dr. Mohamed Ali (Physics department, Faculty of science, Helwan University for his assistance in the measurements.
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Saadeldin, M.M., Mogoda, A.S., Abdelhaleem, S. et al. Correlation of Structural, Morphological and Electrochemical Impedance Study of Electrochemically Prepared p-Type Porous Silicon. J. Surf. Investig. 15, 738–751 (2021). https://doi.org/10.1134/S1027451021040157
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DOI: https://doi.org/10.1134/S1027451021040157