Skip to main content
Log in

Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix

  • CRYSTAL GROWTH
  • Published:
Crystallography Reports Aims and scope Submit manuscript

Abstract

All transformation stages of the crystal structure of iron silicide nanocrystals (NCs) on an atomically pure Si(111) surface under varying synthesis conditions have been studied in detail using high-resolution transmission electron microscopy (HRTEM). The main structural and morphological parameters of iron disilicide NCs in a silicon matrix and the epitaxial relationships between the NC and matrix lattices are established. The elastic strain of β-FeSi2 NCs in a silicon matrix is estimated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
Fig. 10.

Similar content being viewed by others

REFERENCES

  1. R. A. Smith, Semiconductors (Cambridge Univ. Press, Cambridge, 1978).

    MATH  Google Scholar 

  2. M. C. Bost and J. Mahan, J. Appl. Phys. 64, 2034 (1988). https://doi.org/10.1063/1.341735

    Article  ADS  Google Scholar 

  3. L. Miglio and G. Malegori, Phys. Rev. B 52 (3), 1448 (1995). https://doi.org/10.1103/PhysRevB.52.1448

    Article  ADS  Google Scholar 

  4. S. Izumi, M. Shaban, N. Promos, et al., Appl. Phys. Lett. 102, 032107 (2013). https://doi.org/10.1063/1.4789391

    Article  ADS  Google Scholar 

  5. M. Suzuno, T. Koizumi, and T. Suemasu, Appl. Phys. Lett. 94, 213509 (2009). https://doi.org/10.1063/1.4789391

    Article  ADS  Google Scholar 

  6. T. Suemasu, Y. Ugajin, S. Murase, et al., J. Appl. Phys. 101, 124506 (2007). https://doi.org/10.1063/1.2749200

    Article  ADS  Google Scholar 

  7. C. Spinella, S. Coffa, C. Bongiorno, et al., Appl. Phys. Lett. 76, 173 (2000). https://doi.org/10.1063/1.125693

    Article  ADS  Google Scholar 

  8. M. Ishimaru, K. Omae, I.-T. Bae, et al., J. Appl. Phys. 99, 113 (2006). https://doi.org/10.1063/1.2201729

    Article  Google Scholar 

  9. C. Lal, R. Dhunna, R. S. Dhaka, et al., J. Optoelectron. Adv. Mater. 12 (2), 17710 (2010).

    Google Scholar 

  10. S. Sakane, M. Isogawa, K. Watanabe, et al., J. Vac. Sci. Technol. A 35 (4), 041402 (2017). https://doi.org/10.1116/1.4984107

    Article  Google Scholar 

  11. E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko, et al., JJAP Conf. Proc. 5, 011401 (2017). https://doi.org/10.7567/JJAPCP.5.011401

  12. N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, et al., Semiconductors 41 (9), 1067 (2007).

    Article  ADS  Google Scholar 

  13. N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, et al., Thin Solid Films 515, 7805 (2007). https://doi.org/10.1016/j.tsf.2007.04.019

    Article  ADS  Google Scholar 

  14. A. K. Gutakovskii, A. L. Chuvilin, and S. A. Song, Bull. Russ. Acad. Sci.: Phys. 71 (10), 1426 (2007). https://doi.org/10.3103/S1062873807100267

    Article  Google Scholar 

  15. S. A. Dotsenko, N. G. Galkin, L. V. Koval’, et al., J. Surf. Sci. Nanotech. 4, 319 (2006). https://doi.org/10.1142/9789812701947_0070

    Article  Google Scholar 

  16. L. Wang, C. Lin, Q. Shen, et al., Appl. Phys. Lett. 66, 3453 (1995). https://doi.org/10.1063/1.113385

    Article  ADS  Google Scholar 

  17. H. P. Zeindl, V. Fuenzalida, J. Messarosch, et al., J. Cryst. Growth 81, 231 (1987). https://doi.org/10.1016/0022-0248(87)90397-6

    Article  ADS  Google Scholar 

  18. W. Raunau, H. Niehus, and G. Comsa, Surf. Sci. Lett. 284, L375 (1993). https://doi.org/10.1016/0167-2584(93)90960-Q

    Article  ADS  Google Scholar 

  19. K. N. Galkin, D. L. Goroshko, E. A. Chusovitin, et al., Proc. ASCO-NANOMAT 2018, FEFU, Vladivostok, Russia, 2018, p. 140.

  20. N. G. Galkin, K. N. Dotsenko. S. A. Galkin, et al., Key Eng. Mater. 806, 30 (2019). doi 10.4028/www.scientific.net/KEM.806.30

  21. D. Das, J. C. Mahato, B. Bisi, et al., Appl. Phys. Lett. 105, 191606 (2014). https://doi.org/10.1063/1.4901815

    Article  ADS  Google Scholar 

  22. Zu-Lin Peng, S. Liang, and Luo-Genv Deng, Chin. Phys. Lett. 26, 127301 (2009). https://doi.org/10.1088/0256-307X/26/12/127301

    Article  ADS  Google Scholar 

  23. N. G. Galkin, E. A. Chusovitin, L. Dozsa, et al., Appl. Surf. Sci. 256, 7331 (2010). https://doi.org/10.1016/j.apsusc.2010.05.025

    Article  ADS  Google Scholar 

  24. D. B. Migas and L. Miglio, Phys. Rev. B 62, 11063 (2000). https://doi.org/10.1103/PhysRevB.V.62.P.11063

    Article  ADS  Google Scholar 

  25. A. V. Shevlyagin, D. L. Goroshko, E. Chusovitin, et al., J. Appl. Phys. 121, 113101 (2017). https://doi.org/10.1063/1.4978372

    Article  ADS  Google Scholar 

  26. A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, et al., Proc. Int. Conf. on Metamaterials and Nanophotonics (METANANO-2017), AIP Conf. Proc., Vol. 1874, p. 030007-1. https://doi.org/10.1063/1.4998036

  27. A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, et al., Sci. Rep. 10 (5), 14795 (2015). https://doi.org/10.1038/srep14795

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

We are grateful to N.G. Galkin, D.L. Goroshko, E.A. Chusovitin, and A.V. Shevlyagin (IACP FEB RAS) for the statement of the urgent problem, supply with unique objects of study, and fruitful discussion of the results.

Funding

This study was supported by the Russian Science Foundation, project no. 19-72-30023.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. K. Gutakovskii.

Additional information

Translated by Yu. Sin’kov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gutakovskii, A.K., Latyshev, A.V. Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix. Crystallogr. Rep. 66, 601–607 (2021). https://doi.org/10.1134/S1063774521040088

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063774521040088

Navigation