Abstract—
Surface modification of GaAs in sulfur vapor by different procedures and subsequent annealing and thermal oxidation have an advantageous effect on the properties of heterostructures, ensuring binding of the constituent components of the substrate and the formation of films with a uniform surface, without well-defined defects. The approaches proposed in this work allow films of nanometer thickness with resistivity from ~108 to ~1010 Ω cm to be grown on the surface of GaAs by a simple method.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Lutz, J., Schlangenotto, H., Scheuermann, U., and De Doncker, R., Semiconductor Power Devices: Physics, Characteristics, Reliability, Berlin: Springer, 2018.https://doi.org/10.1007/978-3-642-11125-9
Mittova, I.Ya., Sladkopevtsev, B.V., Tomina, E.V., Samsonov, A.A., Tret’yakov, N.N., and Ponomarenko, S.V., Preparation of dielectric films via thermal oxidation of MnO2/GaAs, Inorg. Mater., 2018, vol. 54, no. 11, pp. 1085–1092.https://doi.org/10.1134/S0020168518110109
Mittova, I.Ya., Sladkopevtsev, B.V., Samsonov, A.A., Tomina, E.V., Andreenko, S.Yu., and Kostenko, P.V., Growth and properties of nanofilms produced by the thermal oxidation of MnO2/InP under the effect of Mn3(PO4)2, Inorg. Mater., 2019, vol. 55, no. 9, pp. 915–919.https://doi.org/10.1134/S0020168519090073
Mittova, I.Ya., Pukhova, V.V., Klement’eva, I.F., Semenov, V.N., and Kashkarov, V.M., Thermal oxidation of GaAs/Bi2S3 structures and properties of dielectric layers on GaAs, Izv. Akad. Nauk SSSR, Neorg. Mater., 1988, vol. 24, no. 9, pp. 1431–1434.
Bessolov, V.N. and Lebedev, M.V., Chalcogenide passivation of III–V semiconductor surfaces, Semiconductors, 1998, vol. 32, no. 11, pp. 1141–1156.https://doi.org/10.1134/1.1187580
Berkovits, V.L., Bessolov, V.N., L’vova, T.N., Novikov, E.B., Safarov, V.I., Khasieva, R.V., and Tsarenkov, B.V., Fermi-level movement at GaAs(001) surfaces passivated with sodium sulfide solutions, J. Appl. Phys., 1991, vol. 70, no. 7, pp. 3707–3711.https://doi.org/10.1063/1.349221
Bessolov, V.N., Lebedev, M.V., and Konenkova, E.V., Sulfidization of GaAs in alcoholic solutions: a method having an impact on efficiency and stability of passivation, Mater. Sci. Eng., B, 1997, vol. 44, nos. 1–3, pp. 376–379.https://doi.org/10.1016/S0921-5107(96)01816-8
Yota, J. and Burrows, V.A., Chemical and electrochemical treatments of GaAs with Na2S and (NH4)2S solutions: a surface chemical study, J. Vac. Sci. Technol., A, 1993, vol. 11, no. 4, pp. 1083–1088.https://doi.org/10.1116/1.578445
Rathi, M.K., Tsvid, G., Khandekar, A.A., Shin, J.C., Botez, D., and Kuech, T.F., Passivation of interfacial states for GaAs- and InGaAs/InP-based regrown nanostructures, J. Electron. Mater., 2009, no. 20038, pp. 2023–2032.https://doi.org/10.1007/s11664-009-0887-z
Wang, X. and Weinberg, W.H., Structural model of sulfur on GaAs(100), J. Appl. Phys., 1994, vol. 75, no. 5, pp. 2715–2717.https://doi.org/10.1063/1.356203
Sugahara, H., Oshima, M., and Klauser, R., Bonding states of chemisorbed sulfur atoms on GaAs, Surf. Sci., 1991, vol. 242, pp. 335–340.
Yoshida, N., Chichibu, S., Akane, T., Totsuka, M., Uji, H., Matsumoto, S., and Higuchi, H., Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient, Appl. Phys. Lett., 1993, vol. 63, no. 22, pp. 3035–3037.https://doi.org/10.1063/1.110250
Bessolov, V.N., Sulfide passivation of III–V semiconductors: kinetics of the photoelectrochemical reaction, J. Vac. Sci. Technol., B, 1993, vol. 11, no. 1, pp. 10–14.https://doi.org/10.1116/1.586710
Ugai, Ya.A., Malevskaya, L.A., Anokhin, V.Z., Mittova, I.Ya., and Pukhova, V.V., Mutual influence of semiconductor and metal surfaces during thermal oxidation in “sandwich” structures, Dokl. Akad. Nauk SSSR, 1987, vol. 295, no. 4, pp. 894–896.
Syrov, Yu.V., Interaction of indium antimonide with saturated sulfur vapor, Dokl. Chem., 2016, vol. 471, no. 2, pp. 365–367.https://doi.org/10.1134/S0012500816120077
Spesivtsev, E.V., Rykhlitskii, S.V., and Shvets, V.A., Development of optical ellipsometry methods and instruments at the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Avtometriya, 2011, vol. 47, no. 5, pp. 5–12.
Kostryukov, V.F., Mittova, I.Ya., Shvets, V.A., Tomina, E.V., Sladkopevtsev, B.V., and Tret’yakov, N.N., Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation, Inorg. Mater., 2014, vol. 50, no. 9, pp. 882–887.https://doi.org/10.1134/S0020168514090052
Wilmsen, C.W., The chemical composition and formation of thermal and anodic oxides/III–V compound semiconductor interfaces: a critical review, J. Vac. Sci. Technol., 1981, no. 19, pp. 279–289.
Guillen-Cervantes, A., Lopez-Lopez, M., Rivera-Alvarez, Z., Lopez-Luna, E., and Hernandcz-Calderon, I., GaAs surface oxide desorption by annealing in ultra-high vacuum, Thin Solid Films, 2000, vol. 373, pp. 159–163.https://doi.org/10.1016/S0040-6090(00)01126-3
Nakamoto, K., Infrared and Raman Spectra of Inorganic and Coordination Compounds, New York: Wiley, 1986.
ACKNOWLEDGMENTS
In our work, we used equipment at the Shared Research Facilities Center, Voronezh State University.
Funding
This study was supported by the Russian Foundation for Basic Research, grant no. 18-03-00354a.
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated by O. Tsarev
Rights and permissions
About this article
Cite this article
Mittova, I.Y., Sladkopevtsev, B.V., Dontsov, A.I. et al. Thermal Oxidation of a Single-Crystal GaAs Surface Treated in Sulfur Vapor. Inorg Mater 57, 663–668 (2021). https://doi.org/10.1134/S002016852107013X
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S002016852107013X