Abstract
Molecular layer deposition (MLD) of thin polyamide films was performed using 1,3,5-benzenetricarbonyltrichloride (trimesoyl chloride, TMC) and 1,2-ethylenediamine (EDA) as precursors at a temperature of 120°С. The growth rate at this temperature was 1.85 nm/cycle. In situ quartz crystal microbalance (QCM) study was used to determine the film growth behavior. QCM signal showed linear film growth with an increasing number of MLD cycles. Pyrolysis of MLD polyamide films on Si(111) was conducted at temperatures of 1100 and 1300°С and a pressure of 10−7 Torr. Thin heteroepitaxial films of β-SiC (3C–SiC) on the Si(111) were obtained as a result of a solid-phase reaction between Si and C at 1300°С. A variety of high-resolution spectroscopic techniques were used to determine the elemental composition and crystal structure of organic and ceramic films.
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REFERENCES
S. E. Saddow and A. Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House, London, 2004).
D. M. Lukin, C. Dory, M. A. Guidry, et al., Nat. Photon. 14, 330 (2020).
F. Fuchs, B. Stender, M. Trupke, et al., Nat. Commun. 6, 7578 (2015).
B. Duan, X. Yang, J. Lv, and Y. Yang, IEEE Trans. Electron Dev. 65, 3388 (2018).
W. Jianwei, M. A. Capano, M. R. Melloch, and J. A. Cooper, IEEE Electron Dev. Lett. 23, 482 (2002).
S. Lotfi, L. G. Li, Ö. Vallin, et al., Solid-State Electron. 70, 14 (2012).
K. Powell, A. Shams-Ansari, S. Desai, et al., Opt Express 28, 4938 (2020).
J. R. Weber, W. F. Koehl, J. B. Varley, et al., J. Appl. Phys. 109, 102417 (2011).
R. Choudhary, R. Biswas, B. Pan, and D. Paudyal, MRS Adv. 4, 2217 (2019).
V. Presser, M. Heon, and Y. Gogotsi, Adv. Funct. Mater. 21, 810 (2011).
J. Hass, W. A. de Heer, and E. H. Conrad, J. Phys.: Condens. Matter 20, 323202 (2008).
C. A. Zorman, S. Rajgopal, X. A. Fu, et al., Electrochem. Solid State Lett. 5 (10), G99 (2002).
N. Ledermann, P. Muralt, N. Xantopoulos, and J.‑M. Tellenbach, Surf. Coat. Technol. 125, 246 (2000).
R. Brütsch, Thin Solid Films 126, 313 (1985).
L. Tong, M. Mehregany, and W. C. Tang, in Proceedings of the IEEE Micro Electro Mechanical Systems Conference, Fort Lauderdale, FL, 1993.
M. J. Loboda, J. A. Seifferly, and F. C. Dall, J. Vacuum Sci. Technol. A 12, 90 (1994).
Q. J. Cheng, S. Y. Xu, J. D. Long, and K. Ostrikov, Chem. Vapor Deposit. 13, 561 (2007).
A. Severino, G. D’Arrigo, C. Bongiorno, et al., J. Appl. Phys. 102, 023518 (2007).
Y. Watanabe, T. Horikawa, and K. Kamimura, Jpn. J. Appl. Phys. 53, 045601 (2014).
S. I. Molina, F. M. Morales, and D. Araujo, Mater. Sci. Eng. B 80, 342 (2001).
B. Yang, Y. Zhou, W. Cai, et al., Appl. Phys. Lett. 64, 1445 (1994).
V. Luchinin, S. Goloudina, V. Pasyuta, et al., Jpn. J. Appl. Phys. 56, 06GH08 (2017).
H. Pan, H. Guo, E. Lu, et al., J. Electron Spectrosc. Relat. Phenom. 101, 685 (1999). https://doi.org/10.1016/S0368-2048(98)00390-9
B. Jin, P. He, Y. Sheng, and B. Yang, J. Phys. Chem. Solids 64, 339 (2003).
G. Leal, T. Campos, A. Sobrinho, et al., Mater. Res. 17, 472 (2014).
R. G. DeAnna, A. J. Fleischman, C. A. Zorman, and M. Mehregany, J. Chem. Vapor Deposit. 6, 280 (1998).
J. M. Carballo, Thesis (Univ. South Florida, Tampa, 2010).
S. M. George, B. Yoon, and A. A. Dameron, Acc. Chem. Res. 42, 498 (2009).
A. A. Malygin, V. E. Drozd, A. A. Malkov, and V. M. Smirnov, Chem. Vapor Deposit. 21 (10–12), 216 (2015).
S. M. George, Chem. Rev. 110, 111 (2010).
T. Yoshimura, S. Tatsuura, and W. Sotoyama, Appl. Phys. Lett. 59, 482 (1991).
Y. Du and S. M. George, J. Phys. Chem. C 111, 8509 (2007).
N. M. Adamczyk, A. A. Dameron, and S. M. George, Langmuir 24, 2081 (2008).
P. Loscutoff, H. Zhou, S. Clendenning, and S. Bent, ACS Nano 4, 331 (2009).
T. Yoshimura, S. Tatsuura, W. Sotoyama, et al., Appl. Phys. Lett. 60, 268 (1992).
T. V. Ivanova, P. S. Maydannik, and D. C. Cameron, J. Vacuum Sci. Technol. A 30, 01A121 (2012).
A. Abdulagatov, K. Terauds, J. Travis, et al., J. Phys. Chem. C 117, 17442 (2012).
J. W. DuMont and S. M. George, J. Phys. Chem. C 119, 14603 (2015).
P. Yang, G. Wang, Z. Gao, et al., Materials (Basel) 6, 5602 (2013).
G. F. L. Ehlers, K. R. Fisch, and W. R. Powell, J. Polym. Sci., Part A 8, 3511 (1970).
M. Herrera, G. Matuschek, and A. Kettrup, J. Therm. Anal. Calorim. 59, 385 (2000).
H. Hatori, Y. Yamada, M. Shiraishi, et al., Carbon 34, 201 (1996).
W. Xie, W.-P. Pan, and K. Chuang, J. Therm. Anal. Calorim. 64, 477 (2001).
V. Krongauz, J. Therm. Anal. Calorim. 102, 435 (2010).
L. Ju, Thesis (Lehigh Univ., Bethlehem, PA, 2018).
D. J. Higgs, J. W. DuMont, K. Sharma, and S. M. George, J. Vacuum Sci. Technol. A 36, 01A117 (2018).
H. J. Kim, K. Choi, Y. Baek, et al., ACS Appl. Mater. Interfaces 6, 2819 (2014).
Interpreting Infrared, Raman, and Nuclear Magnetic Resonance Spectra, Ed. by R. A. Nyquist (Academic, San Diego, 2001), Chap. 9, p. 351.
A. A. Pud, K. Y. Fatyeyeva, J. F. Bardeau, et al., J. Macromol. Sci., Part A 44, 183 (2007).
Y. Furukawa, F. Ueda, Y. Hyodo, et al., Macromolecules 21, 1297 (1988).
G. Socrates, Infrared and Raman Characteristic Group Frequencies: Tables and Charts, 3rd ed. (Am. Chem. Soc., 2002).
A. C. Ferrari and J. Robertson, Phys. Rev. B 64, 075414 (2001).
J. Maultzsch, S. Reich, and C. Thomsen, Phys. Rev. B 70, 155403 (2004).
A. C. Ferrari, Phys. Rev. B 61, 14095 (2000).
T. Ohnishi, I.Murase, T. Noguchi, and M. Hirooka, Synth. Met. 18, 497 (1987).
J. C. Burton, L. Sun, M. Pophristic, et al., J. Appl. Phys. 84, 6268 (1998).
S. Nakashima and H. Harima, Phys. Status Solidi A 162, 39 (1997).
B. Yang, W. Cai, P. He, et al., J. Appl. Phys. 77, 6733 (1995).
J. Chen, A. J. Steckl, and M. J. Loboda, J. Vacuum Sci. Technol. B 16, 1305 (1998).
L. Moro, A. Paul, D. C. Lorents, et al., J. Appl. Phys. 81, 6141 (1997).
GaussView, Version 6 (2016).
T. S. Nisao Nakashima, Jpn. J. Appl. Phys. 5, 874 (1966).
K. Kim, C. Park, J. Roh, et al., J. Vacuum Sci. Technol. A 19, 2636 (2001).
W. Z. A. W. Jusoh, S. A. Rahman, A. L. Ahmad, and N. M. Mokhtar, C. R. Chim. 22, 755 (2019).
Y. Wang, Z. Fang, S. Zhao, et al., RSC Adv. 8, 22469 (2018).
F. Pacheco, R. Sougrat, M. Reinhard, et al., J. Membr. Sci. 501, 33 (2016).
M. Bosi, C. Ferrari, D. Nilsson, and P. Ward, CrystEngComm18, 7478 (2016).
S. Madapura, A. Steckl, and M. Loboda, J. Electrochem. Soc. 146, 1197 (1999).
R. Scholz, U. Gosele, E. Niemann, et al., Diamond Relat. Mater. 6, 1365 (1997).
K. M. Fitzer and W. Schaefer, in Chemistry and Physics of Carbon, Ed. by P. L. Walker (Marcel Dekker, New York, 1971), Vol. 7, p. 329.
G. Dufour, F. Rochet, F. C. Stedile, et al., Phys. Rev. B 56, 4266 (1997).
J. Pezoldt and V. Cimalla, Crystals 10, 523 (2020).
V. Kuzmina, S. Soldatenko, and A. Sinelnikov, Altern. Energy Ecol., p. 96 (2018). https://doi.org/10.15518/isjaee.2018.22-24.096-106
K. Teker, K. H. Lee, C. Jacob, et al., MRS Proc. 640, H5.10 (2011).
A. J. Learn and I. H. Khan, Thin Solid Films 5, 145 (1970).
V. M. Ievlev, V. S. Ilyin, S. B. Kushev, S. A. Soldatenko, A. N. Lukin, and E. K. Belonogov, J. Surf. Invest.: X‑ray, Synchrotron Neutron Tech. 3, 791 (2009).
K. Jurkiewicz, M. Pawlyta, and A. Burian, J. Carbon Res. 4, 68 (2018).
R. Bantaculo, H. Fukidome, and M. Suemitsu, IOP Conf. Ser.: Mater. Sci. Eng. 79, 012004 (2015).
ACKNOWLEDGMENTS
The authors thank A.M. Ismailov (Faculty of Physical Electronics, Dagestan State University) for his technical assistance and help in obtaining RHEED patterns.
Funding
This work was supported by the Russian Foundation for Basic Research, project no. 19-33-90045 (R.R. Amashaev); and partially by the Government of the Russian Federation, grant no. FZNZ-2020-0002 (I.M. Abdulagatov).
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Amashaev, R.R., Abdulagatov, I.M., Rabadanov, M.K. et al. Molecular Layer Deposition and Pyrolysis of Polyamide Films on Si(111) with Formation of β-SiC. Russ. J. Phys. Chem. 95, 1439–1448 (2021). https://doi.org/10.1134/S0036024421070049
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DOI: https://doi.org/10.1134/S0036024421070049