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A 350 mV, 2 MHz, 16-kb SRAM with programmable wordline boosting in the 65 nm CMOS technology

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Abstract

The paper presents an SRAM macro capable of working down to 350 mV with programmable wordline boosting feature. Wordline boosting allows us to improve the performance while keep the supply voltage in sub-threshold region. The measurement results on a 16 kb macro achieves minimum energy consumption of 0.536 fJ/b at 400 mV and operating at 400 mV. In addition, the macro achieves 22% lower energy consumption under optimal boost condition with respect to no boost condition for the same operation speed.

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  1. University of Waterloo, Waterloo, ON, Canada

    Morteza Nabavi & Manoj Sachdev

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  1. Morteza Nabavi
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  2. Manoj Sachdev
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Correspondence to Morteza Nabavi.

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Nabavi, M., Sachdev, M. A 350 mV, 2 MHz, 16-kb SRAM with programmable wordline boosting in the 65 nm CMOS technology. Analog Integr Circ Sig Process 109, 213–224 (2021). https://doi.org/10.1007/s10470-021-01907-x

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  • DOI: https://doi.org/10.1007/s10470-021-01907-x

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