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An ultra-low power hybrid 2nd order feed forward ΔΣ modulator design for implantable medical devices

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Abstract

This paper presents a proposed ultra-low-power second order feedforward (FF) delta sigma (ΔΣ) modulator using two different integrators structures for implantable biomedical devices in the MICS band. In fact, the first active integrator is designed using a proposed optimized bulk driven telescopic operational transconductance amplifier while the second passive one is designed using a MOS Parametric amplifier. The ΔΣ modulator is designed for a signal bandwidth of 150 kHz with an oversampling ratio of 50. In fact, the proposed circuit is simulated using system-level model as well as device-level description for TSMC 0.18 μm CMOS technology. In this circuit, an input signal of −1.93 dBFS magnitude and 68.66 kHz frequency was sampled at a frequency of 15 MHz. Device-level simulations results indicate that the designed ΔΣ FF modulator achieves a signal to noise ratio (SNR) of 63 dB and a resolution of 10.18bits. It consumes only 3 µW under a ± 0.5 V supply voltage.

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Authors and Affiliations

  1. Laboratory of Electronics and Technologies of Information (LETI), University of Sfax, Tunisia National School of Engineers of Sfax, Sfax, Tunisia

    Dalila Laouej, Houda Daoud & Mourad Loulou

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  1. Dalila Laouej
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  2. Houda Daoud
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  3. Mourad Loulou
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Correspondence to Dalila Laouej.

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Laouej, D., Daoud, H. & Loulou, M. An ultra-low power hybrid 2nd order feed forward ΔΣ modulator design for implantable medical devices. Analog Integr Circ Sig Process 108, 277–289 (2021). https://doi.org/10.1007/s10470-021-01894-z

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