Commensurate-incommensurate transition and strain relief patterns in monolayer C60 on Cd(0001)

Zilong Wang, Kai Sun, Minlong Tao, Daxiao Yang, Mingxia Shi, Zuo Li, and Junzhong Wang
Phys. Rev. B 103, 245430 – Published 23 June 2021

Abstract

We have studied the commensurate-incommensurate phase transition, rotation epitaxy, and strain relief patterns in C60 overlayers grown on Cd(0001) with a low-temperature scanning tunneling microscopy. When deposited at low temperature (∼200 K), C60 molecules form the 10×10 high-order commensurate (HOC) phase with two different half-unit cells, resembling the Si(111)7×7 surface. Postannealing at room temperature (RT) results in the transition from HOC phase to incommensurate phase, in which strain relaxation takes place in the form of periodic vacancies and C60 heptamer arrays. In the case of RT deposition, parallel stripe domain walls appeared in the commensurate 23×23 R30° phase. These results provide essential information for understanding the strain relaxation mechanism, and the role of substrate temperatures in the process of C60 thin films growth.

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  • Received 13 April 2021
  • Revised 30 May 2021
  • Accepted 15 June 2021

DOI:https://doi.org/10.1103/PhysRevB.103.245430

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zilong Wang, Kai Sun*, Minlong Tao, Daxiao Yang, Mingxia Shi, Zuo Li, and Junzhong Wang*

  • School of Physical Science and Technology, Southwest University, Chongqing 400715, China

  • *Corresponding authors: skqtt@swu.edu.cn; jzwangcn@swu.edu.cn

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Vol. 103, Iss. 24 — 15 June 2021

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