Abstract
We have studied the commensurate-incommensurate phase transition, rotation epitaxy, and strain relief patterns in overlayers grown on Cd(0001) with a low-temperature scanning tunneling microscopy. When deposited at low temperature (∼200 K), molecules form the 10×10 high-order commensurate (HOC) phase with two different half-unit cells, resembling the surface. Postannealing at room temperature (RT) results in the transition from HOC phase to incommensurate phase, in which strain relaxation takes place in the form of periodic vacancies and heptamer arrays. In the case of RT deposition, parallel stripe domain walls appeared in the commensurate R30° phase. These results provide essential information for understanding the strain relaxation mechanism, and the role of substrate temperatures in the process of thin films growth.
- Received 13 April 2021
- Revised 30 May 2021
- Accepted 15 June 2021
DOI:https://doi.org/10.1103/PhysRevB.103.245430
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