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High dielectric temperature stability and dielectric relaxation mechanism of (K0.5Na0.5)NbO3-LaBiO3 ceramics

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Abstract

(1–x)K0.5Na0.5NbO3-xLaBiO3 [(1–x)KNN-xLB, x = 0, 0.005, 0.015] lead-free ceramics were prepared via a solid-state reaction route. An orthorhombic symmetry was determined for all samples by the Rietveld refinement of XRD patterns. The 0.995KNN-0.005LB ceramic (KNN-5LB) exhibits an ultrahigh and stable relative permittivity (ε’ ~ 2158 ± 15%) with a low dielectric loss tangent (tanδ ≤ 3%) in a very broad operation temperature range from 172 °C to 450 °C due to two close diffuse phase transitions at ~200 °C and ~ 380 °C induced by La and an additional polarization from off-centered Bi ions. The Cole-Cole plot of iso-thermal complex impedance suggests that the high-temperature dielectric response of the KNN-5LB is attributed to the polarizations from grains, grain boundaries and electrode interfaces. Both the imaginary parts of impedance and modulus exhibit the thermally activated process and scaling behavior. The frequency dependent conductivity (σac) of the KNN-5LB follows the Universal Dielectric Response (UDR) law. The conduction mechanism is related to the small polaron hopping.

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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

This work was supported by the Natural Science Foundation of Guangxi (Grant 2019GXNSFBA245069, AA138162, GA245006, and AA294014), the Middle-aged and Young Teachers’ Basic Ability Promotion Project of Guangxi (Grant 2019KY0290), Guilin University of Technology (Grant GUTQDJJ20176612037), the High Level Innovation Team and Outstanding Scholar Program of Guangxi Institutes, open Research Program of Key Laboratory of RF Circuit and System, Ministry of Education, and Key Laboratory of Large Scale Integrated Design of ZheJiang.

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Authors and Affiliations

  1. College of Mechanical and Control Engineering & College of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, China

    Shuo Zhou, Tianxiang Yan, Kaiyuan Chen, Xiafeng He, Liang Fang & Laijun Liu

  2. Key Laboratory for RF Circuits and Systems, Ministry of Education, Key Laboratory of Large Scale Integrated Design, Hangzhou Dianzi University, Hangzhou, 310018, China

    Jie Wang

  3. National Space Science Center, Chinese Academy of Sciences, Beijing, 100190, China

    Yu Qiang

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  1. Shuo Zhou
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Zhou, S., Yan, T., Chen, K. et al. High dielectric temperature stability and dielectric relaxation mechanism of (K0.5Na0.5)NbO3-LaBiO3 ceramics. J Electroceram 46, 72–82 (2021). https://doi.org/10.1007/s10832-021-00245-8

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