paper

Study the effect of insertion devices on electron beam properties by envelope method

, , , , and

Published 4 May 2021 © 2021 IOP Publishing Ltd and Sissa Medialab
, , Citation A. Mashal et al 2021 JINST 16 P05005 DOI 10.1088/1748-0221/16/05/P05005

1748-0221/16/05/P05005

Abstract

The presence of the insertion devices (IDs) in a storage ring impacts the electron beam properties in different ways. Passing the electrons through the ID changes the betatron tunes, betatron amplitude function, and equilibrium parameters like emittance and energy spreads. The expression of equilibrium parameters in terms of radiation integrals is a common method for computing the effect of IDs on beam parameters. The effect of coupling is not included in the radiation integral method, so it is expected that in the case of using elliptically polarized undulators or modeling the real lattice with errors, this method could not express the beam parameters precisely. On the other hand, the equilibrium distribution of the electron beam and its related parameters could be determined directly by the envelope method. The envelope formalism is the most accurate method to compute the beam properties. In this study, we investigated the effect of IDs and lattice errors on beam parameters with both radiation integral and envelope methods. The results show that the envelope method could project the effect of magnetic imperfection and induced coupling from IDs on beam parameters.

Export citation and abstract BibTeX RIS

10.1088/1748-0221/16/05/P05005