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Experimental study on machining germanium wafer with ice particle, fixed abrasive tools

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Abstract

A novel ice particle-fixed abrasive tool (IPFAT) was designed and manufactured in this paper. The uniformity of abrasives distribution in the IPFAT was tested. Using three kinds of IPFAT, which contains α-Al2O3 particles whose mean particle sizes are 5 μm, 1.289 μm, and 0.328 μm respectively; single crystal germanium wafers were lapped and then polished. The results show that the distribution of abrasives in the IPFAT is uniform and the IPFAT has the ability of self-sharpening. With the increased lap and polishing time, the surface roughness of the single crystal germanium wafers decreases linearly and the materials remove rate (MRR) basically remains invariable. After polishing with a 0.328 μm α-Al2O3 IPFAT, the surface roughness of the single crystal germanium wafer is 85 nm within 500 μm × 500 μm and the surface is even without obvious undulation.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This work was supported by National Natural Science Foundation of China (Grant No. 52075254 and 51375237).

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Authors and Affiliations

  1. College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China

    Ze Yu, Yuli Sun, Guiguan Zhang, Wenzhuang Lu & Dunwen Zuo

Authors
  1. Ze Yu
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  2. Yuli Sun
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  3. Guiguan Zhang
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  4. Wenzhuang Lu
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  5. Dunwen Zuo
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Contributions

Ze Yu: investigation, data curation, and writing — original draft. Yuli Sun: funding acquisition, conceptualization, and writing — review and editing. Guiguan Zhang: investigation and editing. Wenzhuang Lu: data curation. Dunwen Zuo: conceptualization, supervision. All authors read and reviewed the manuscript.

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Correspondence to Yuli Sun.

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Yu, Z., Sun, Y., Zhang, G. et al. Experimental study on machining germanium wafer with ice particle, fixed abrasive tools. Int J Adv Manuf Technol 115, 3225–3232 (2021). https://doi.org/10.1007/s00170-021-07352-4

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  • DOI: https://doi.org/10.1007/s00170-021-07352-4

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