Elsevier

Solid-State Electronics

Volume 183, September 2021, 108108
Solid-State Electronics

Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures

https://doi.org/10.1016/j.sse.2021.108108Get rights and content

Highlights

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    Temperature dependent sheet resistance and specific contact resistivity of Ti/Ai/Ni/Au contact on lattice-mattched InAlN/GaN heterostructures were studied.

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    At T < 200 K, Rsh has a weak temperature dependence, which is attributed to the comparable impurity and phonon scattering components.

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    At T > 200 K, Rsh increase rapidly with temperature, as the phonon scattering mechanism becomes dominant.

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    At T < 350 K, ρSC shows a power-law dependent behavior, which is ascribed to the formation of TiN metal-like protrusions after annealing.

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    At T > 350 K, the experimental results can been well explained with a TFE transport model.

Abstract

In this work, we fabricated the transmission line model test structures of Ti/Al/Ni/Au Ohmic contact on the lattice-matched In0.17Al0.83 N/GaN heterostructures, grown on the silicon and sapphire substrates respectively, and studied the temperature-dependent characteristics of the sheet resistance (Rsh) and the specific contact resistivity (ρSC). The ln(Rsh)-ln(T) plot has two distinct linearly dependent regions: 1) At T < 200 K, the slope is close to zero, indicating the comparable impurity and phonon scattering components; 2) At T > 200 K, it becomes much smaller than zero, as the phonon scattering effect becomes significant. Increasing the temperature from 100 K to 523 K, ρSC exhibits a typical roll-over behavior: 1) At T < 350 K, a “metal-like” property is important, featuring a power-law coefficient of α ~ 1.95, which is ascribed to the formation of TiN protrusions across the InAlN barrier after the rapid thermal annealing; 2) At T > 350 K, a thermionic field emission current model agrees well with the experimental data points, and the effective barrier heights are extracted to be about 1.21 eV and 0.81 eV for the samples on the silicon and sapphire substrates, respectively.

Section snippets

Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Dejin Zhou received the M.S. in microelectronic from Jiangnan University, Wuxi, China, in 2008. He is currently The director of laboratory Wuxi research institute of applied technologies, Tsinghua University. His current research interests include WBS(Wide band semiconductor) materials, power semiconductor device and integration, semiconductor testing and failure analysis.

References (17)

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Dejin Zhou received the M.S. in microelectronic from Jiangnan University, Wuxi, China, in 2008. He is currently The director of laboratory Wuxi research institute of applied technologies, Tsinghua University. His current research interests include WBS(Wide band semiconductor) materials, power semiconductor device and integration, semiconductor testing and failure analysis.

Hong Xu received Ph.D degree in optical engineering from Beijing University of Technology. Beijing, China, in 2014. He is currently a deputy director of laboratory Wuxi research institute of applied technologies, Tsinghua University. His current research interests include semiconductor materials, devices, testing and failure analysis.

Leilei Chen is pursuing the doctor’s degree in the Department of Electronic Engineering, Jiangnan University, Wuxi, China. His current research interests include the fabrication and characterization of GaN-based power devices.

Hong-Liang Lu received the Ph.D. degree in microelectronics from Fudan University, Shanghai, China. He was a JSPS Research Fellow with the Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan. He is currently a Professor with the School of Microelectronics, Fudan University. His current research interests include atomic layer deposition of thin films, high mobility semiconductor devices, advanced micro-nano sensors, and so on.

Wei Huang received the B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, and the Ph.D. degree from Peking University, Beijing, China. He currently focuses on developing the technology and production of the advanced power integration.

David Wei Zhang received the Ph.D. degree from Xi'an Jiaotong University, Shaanxi, China. He was a Humboldt Research Fellow with the TU-Chemnitz, Germany. He is currently a full Professor and Deputy Dean with the School of Microelectronics, Fudan University. He was also named as the Yangtze River Scholars Distinguished Professor, China. His current research interests include advanced IC materials and processes, high-speed and low-power semiconductor devices, and so on.

Dawei Yan received the Ph.D. degree in electri- cal engineering from Nanjing University, Nanjing, China, in 2011. He is currently an Associate Professor of Microelectronics with Jiangnan University, Wuxi, China. His current research interests include electrical characterization, modeling, and reliabil- ity of electronic and optoelectronic devices grown wide-bandgap semiconductors.

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