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A Visible Light Modulated Resistive Switching Memory Behaviors in the Ta/BiFeO3/Carbon/BaTiO3/Si Device

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Abstract

A bipolar resistance switching memory effect is observed in the Ta/BiFeO3/carbon/BaTiO3/Si structure. The resistance switching (RS) behavior can be modulated by an optical signal. The HRS/LRS resistance ratio and threshold voltage change remarkably under white-light irradiation. The trap-based charges in the Schottky-like depletion layers excited by the white light are responsible for the white-light controlled RS memory behaviors. This research is useful in exploring multi-functional materials and applications in optical-controlled nonvolatile memory devices.

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Reference

  1. G.D. Zhou, B. Sun, Y. Yao, H. Zhang, A. Zhou, K. Alameh, B. Ding, and Q. Song, Appl. Phys. Lett. 109, 143904 (2016).

    Article  Google Scholar 

  2. T.S. Bhat, C.C. Revadekar, S.S. Patil, T.D. Dongale, and P.S. Patil, J. Mater. Sci. J. Mater. Ence Mater. Electron. 31, 5358 (2020).

    Google Scholar 

  3. B. Sun, Y. Liu, W. Zhao, J. Wu, and P. Chen, Nano-Micro Lett. 7, 80 (2015).

    Article  CAS  Google Scholar 

  4. A.A. Patil, S.S. Khot, R.U. Amate, P.N. Kamble, and D.K. Kim, J. Mater. Sci. Mater. Electron. 31, 9695 (2020).

    Article  CAS  Google Scholar 

  5. G.D. Zhou, Z.J. Ren, B. Sun, J.G. Wu, Z. Zou, S.H. Zheng, L.D. Wang, S.K. Duan, and Q.L. Song, Nano Energy 68, 104386 (2020).

    Article  CAS  Google Scholar 

  6. M.U. Khan, G. Hassan, and J. Bae, J. Mater. Sci. Mater. Electron. 31, 9695 (2020).

    Article  Google Scholar 

  7. B. Sun, X.J. Jia, J.H. Wu, and P. Chen, J. Alloy. Compd. 653, 95 (2015).

    Article  CAS  Google Scholar 

  8. P.T. Chandane, T.D. Dongale, P.B. Pati, and A.P. Tiwari, J. Mater. Sci. Mater. Electron. 30, 21288 (2019).

    Article  CAS  Google Scholar 

  9. S.K. Hwang, J.M. Lee, S. Kim, and J.S. Park, Nano. Lett. 12, 2217 (2012).

    Article  CAS  Google Scholar 

  10. Z.S. Tang, Y.Q. Chi, L. Fang, R.L. Liu, and X. Yi, J. Nanosci. Nanotech. 14, 1494 (2014).

    Article  CAS  Google Scholar 

  11. B. Sun, X.P. Li, D.D. Liang, and P. Chen, Chem. Phys. Lett. 643, 66 (2016).

    Article  CAS  Google Scholar 

  12. G.D. Zhou, Z.J. Ren, L.D. Wang, B. Sun, S.K. Duan, and Q.L. Song, Mater. Horiz. 6, 1877 (2019).

    Article  CAS  Google Scholar 

  13. C.H. Jung, S.I. Woo, Y.S. Kim, and K.S. No, Thin Solid Films 519, 3291 (2011).

    Article  CAS  Google Scholar 

  14. P. Kumar, S. Singh, M. Spah, J.K. Juneja, C. Prakash, and K.K. Raina, J. Alloys. Compounds. 489, 59 (2010).

    Article  CAS  Google Scholar 

  15. A.T. Raghavender, N.H. Hong, C. Park, M.H. Jung, and K.J. Lee, Mater. Lett. 65, 2786 (2011).

    Article  CAS  Google Scholar 

  16. H.W. Jang, S.H. Beak, D. Ortiz, and C.M. Folkman, Appl. Phys. Lett. 92, 062910 (2008).

    Article  Google Scholar 

  17. B. Ren, L. Wang, L.J. Wang, J. Huang, K. Tang, and Y.Y. Lou, Vacuum 107, 1 (2014).

    Article  CAS  Google Scholar 

  18. J.S. Wang, D.D. Liang, L.C. Wu, X.P. Li, and P. Chen, Solid State Commun. 275, 8 (2018).

    Article  CAS  Google Scholar 

  19. J.S. Wang, D.D. Liang, X.P. Li, L.C. Wu, and P. Chen, Mater. Res. Exp. 5, 125007 (2018).

    Article  Google Scholar 

  20. X.G. Chen, X.B. Ma, Y.B. Yang, L.P. Chen, G.C. Xiong, G.J. Lian, Y.C. Yang, and J.B. Yang, Appl. Phys. Lett. 98, 122102 (2011).

    Article  Google Scholar 

  21. S.Y. Wang, F. Guo, X. Wang, and W.F. Liu b, J. Gao, Appl. Surf. Sci. 356, 898 (2015).

  22. G.D. Zhou, B. Sun, X. Liu, B. Wu, S. Zhang, and A. Zhou, Compos. Struct. 166, 177 (2017).

    Article  Google Scholar 

  23. H.Y. Yoong, H. Wang, J.X. Xiao, and R. Guo, Appl. Phys. Lett. 109, 242901 (2016).

    Article  Google Scholar 

  24. J.G. Simmons, Phys. Rev. Lett. 15, 967 (1965).

    Article  Google Scholar 

  25. R.Q. Chen, W. Hu, L.L. Zou, W. Xie, B.J. Li, and D.H. Bao, Appl. Phys. Lett. 104, 312 (2014).

    Google Scholar 

  26. M.A. Gaffar, A.A. El-Fadl, and S.B. Anooz, Cryst. Res. Technol. 42, 567 (2007).

    Article  Google Scholar 

  27. X.L. Deng, S. Hong, I.H. Wang, J.S. Kim, J.H. Jeon, Y.C. Park, J. Lee, S.O. Kang, T. Kawai, and B.H. Park, Nanoscale 4, 2029 (2012).

    Article  CAS  Google Scholar 

  28. X.G. Chen, J.B. Fu, S.Q. Liu, Y.B. Yang, C.S. Wang, H.L. Du, G.C. Xiong, G.J. Lian, and J.B. Yang, Appl. Phys. Lett. 101, 153509 (2012).

    Article  Google Scholar 

  29. M. Ungureanu, R. Zazpe, F. Golmar, and P. Stoliar, Adv. Mater. 24, 2496 (2012).

    Article  CAS  Google Scholar 

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Acknowledgments

The research was supported by the national Science Foundation of China (Grant No. 51372209).

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Author notes

  1. Xiulin Li and Xiaoping Li are contributed equally to this work.

Authors and Affiliations

  1. School of Physics Science and Technology, Southwest University, Chongqing, 400715, China

    Xiulin Li, Xiaoping Li & Peng Chen

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  1. Xiulin Li
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  2. Xiaoping Li
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  3. Peng Chen
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Correspondence to Peng Chen.

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Li, X., Li, X. & Chen, P. A Visible Light Modulated Resistive Switching Memory Behaviors in the Ta/BiFeO3/Carbon/BaTiO3/Si Device. J. Electron. Mater. 50, 3972–3975 (2021). https://doi.org/10.1007/s11664-021-08920-w

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  • DOI: https://doi.org/10.1007/s11664-021-08920-w

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