Abstract
Bi2O2Se is a promising material for next-generation semiconducting electronics. It exhibits premature metallicity on the introduction of a tiny amount of electrons, the physics behind which remains elusive. Here we report on transport and dielectric measurements in Bi2O2Se single crystals at various carrier densities. The temperature-dependent resistivity (ρ) indicates a smooth evolution from the semiconducting to the metallic state. The critical concentration for the metal-insulator transition (MIT) to occur is extraordinarily low (nc∼1016 cm−3). The relative permittivity of the insulating sample is huge (ϵr ≈ 155(10)) and varies slowly with temperature. Combined with the light effective mass, a long effective Bohr radius (a *B ≈ 36(2)) is derived, which provides a reasonable interpretation of the metallic prematurity according to Mott’s criterion for MITs. The high electron mobility (µ) at low temperatures may result from the screening of ionized scattering centers due to the huge ≈r. Our findings shed light on the electron dynamics in two dimensional (2D) Bi2O2Se devices.
Similar content being viewed by others
References
H. Boller, Monatsh. Chem. 104, 916 (1973).
J. X. Wu, H. T. Yuan, M. M. Meng, C. Chen, Y. Sun, Z. Y. Chen, W. H. Dang, C. W. Tan, Y. J. Liu, J. B. Yin, Y. B. Zhou, S. Y. Huang, H. Q. Xu, Y. Cui, H. Y. Hwang, Z. F. Liu, Y. L. Chen, B. H. Yan, and H. L. Peng, Nat. Nanotech. 12, 530 (2017).
C. Chen, M. X. Wang, J. X. Wu, H. X. Fu, H. F. Yang, Z. Tian, T. Tu, H. Peng, Y. Sun, X. Xu, J. Jiang, N. B. M. Schröter, Y. W. Li, D. Pei, S. Liu, S. A. Ekahana, H. T. Yuan, J. M. Xue, G. Li, J. F. Jia, Z. K. Liu, B. H. Yan, H. Peng, and Y. L. Chen, Sci. Adv. 4, eaat8355 (2018).
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotech. 6, 147 (2011).
Q. D. Fu, C. Zhu, X. X. Zhao, X. L. Wang, A. Chaturvedi, C. Zhu, X. W. Wang, Q. S. Zeng, J. D. Zhou, F. C. Liu, B. K. Tay, H. Zhang, S. J. Pennycook, and Z. Liu, Adv. Mater. 31, 1804945 (2019).
Y. Sun, J. Zhang, S. Ye, J. Song, and J. L. Qu, Adv. Funct. Mater. 30, 2004480 (2020).
Z. Y. Zhang, T. R. Li, Y. J. Wu, Y. J. Jia, C. W. Tan, X. T. Xu, G. R. Wang, J. Lv, W. Zhang, Y. H. He, J. Pei, C. Ma, G. Q. Li, H. Z. Xu, L. P. Shi, H. L. Peng, and H. L. Li, Adv. Mater. 31, 1805769 (2019).
C. W. Tan, M. Tang, J. X. Wu, Y. N. Liu, T. R. Li, Y. Liang, B. Deng, Z. J. Tan, T. Tu, Y. C. Zhang, C. Liu, J. H. Chen, Y. Wang, and H. L. Peng, Nano Lett. 19, 2148 (2019).
T. R. Li, T. Tu, Y. W. Sun, H. X. Fu, J. Yu, L. Xing, Z. Wang, H. M. Wang, R. D. Jia, J. X. Wu, C. W. Tan, Y. Liang, Y. C. Zhang, C. C. Zhang, Y. M. Dai, C. G. Qiu, M. Li, R. Huang, L. Y. Jiao, K. J. Lai, B. H. Yan, P. Gao, and H. L. Peng, Nat. Electron. 3, 473 (2020).
J. H. Ying, J. B. He, G. Yang, M. L. Liu, H. Z. Lyu, X. Zhang, H. Y. Liu, K. Zhao, R. Y. Jiang, Z. Q. Ji, J. Fan, C. L. Yang, X. N. Jing, G. T. Liu, X. W. Cao, X. F. Wang, L. Lu, and F. M. Qu, Nano Lett. 20, 2569 (2020), arXiv: 2004.04311.
C. C. Zhang, J. X. Wu, Y. W. Sun, C. W. Tan, T. R. Li, T. Tu, Y. C. Zhang, Y. Liang, X. H. Zhou, P. Gao, and H. L. Peng, J. Am. Chem. Soc. 142, 2726 (2020).
J. X. Wu, Y. J. Liu, Z. J. Tan, C. W. Tan, J. B. Yin, T. R. Li, T. Tu, and H. L. Peng, Adv. Mater. 29, 1704060 (2017).
J. Li, Z. X. Wang, Y. Wen, J. W. Chu, L. Yin, R. Q. Cheng, L. Lei, P. He, C. Jiang, L. P. Feng, and J. He, Adv. Funct. Mater. 28, 1706437 (2018).
U. Khan, Y. T. Luo, L. Tang, C. J. Teng, J. M. Liu, B. L. Liu, and H. M. Cheng, Adv. Funct. Mater. 29, 1807979 (2019).
T. Tong, Y. F. Chen, S. C. Qin, W. S. Li, J. R. Zhang, C. H. Zhu, C. C. Zhang, X. Yuan, X. Q. Chen, Z. H. Nie, X. R. Wang, W. D. Hu, F. Q. Wang, W. Q. Liu, P. Wang, X. F. Wang, R. Zhang, and Y. B. Xu, Adv. Funct. Mater. 29, 1905806 (2019).
L. Pan, L. Zhao, X. X. Zhang, C. C. Chen, P. P. Yao, C. L. Jiang, X. D. Shen, Y. N. Lyu, C. H. Lu, L. D. Zhao, and Y. F. Wang, ACS Appl. Mater. Interfaces 11, 21603 (2019).
M. M. Meng, S. Y. Huang, C. W. Tan, J. X. Wu, Y. M. Jing, H. L. Peng, and H. Q. Xu, Nanoscale 10, 2704 (2018).
M. M. Meng, S. Y. Huang, C. W. Tan, J. X. Wu, X. B. Li, H. L. Peng, and H. Q. Xu, Nanoscale 11, 10622 (2019).
J. L. Wang, J. Wu, T. Wang, Z. K. Xu, J. F. Wu, W. H. Hu, Z. Ren, S. Liu, K. Behnia, and X. Lin, Nat. Commun. 11, 3846 (2020), arXiv: 2003.11697.
P. Li, A. Han, C. H. Zhang, X. He, J. W. Zhang, D. X. Zheng, L. Cheng, L. J. Li, G. X. Miao, and X. X. Zhang, ACS Nano 14, 11319 (2020).
G. A. Thomas, A. Kawabata, Y. Ootuka, S. Katsumoto, S. Kobayashi, and W. Sasaki, Phys. Rev. B 26, 2113 (1982).
T. F. Rosenbaum, R. F. Milligan, M. A. Paalanen, G. A. Thomas, R. N. Bhatt, and W. Lin, Phys. Rev. B 27, 7509 (1983).
Y. Y. Lv, L. Xu, S. T. Dong, Y. C. Luo, Y. Y. Zhang, Y. B. Chen, S. H. Yao, J. Zhou, Y. Cui, S. T. Zhang, M. H. Lu, and Y. F. Chen, Phys. Rev. B 99, 195143 (2019).
T. Liang, Q. Gibson, M. N. Ali, M. Liu, R. J. Cava, and N. P. Ong, Nat. Mater. 14, 280 (2015), arXiv: 1404.7794.
X. Huang, L. Zhao, Y. Long, P. Wang, D. Chen, Z. Yang, H. Liang, M. Xue, H. Weng, Z. Fang, X. Dai, and G. Chen, Phys. Rev. X 5, 031023 (2015), arXiv: 1503.01304.
T. Tong, M. H. Zhang, Y. Q. Chen, Y. Li, L. M. Chen, J. R. Zhang, F. Q. Song, X. F. Wang, W. Q. Zou, Y. B. Xu, and R. Zhang, Appl. Phys. Lett. 113, 072106 (2018).
J. X. Wu, C. G. Qiu, H. X. Fu, S. L. Chen, C. C. Zhang, Z. P. Dou, C. W. Tan, T. Tu, T. R. Li, Y. C. Zhang, Z. Y. Zhang, L. M. Peng, P. Gao, B. H. Yan, and H. L. Peng, Nano Lett. 19, 197 (2019).
H. X. Fu, J. X. Wu, H. L. Peng, and B. H. Yan, Phys. Rev. B 97, 241203(R) (2018), arXiv: 1804.03186.
N. F. Mott, Metal-Insulator Transitions, 2nd ed. (Taylor & Francis, London, 1990).
A. R. Mackintosh, Sci. Am. 209, 110 (1963).
A. Spinelli, M. A. Torija, C. Liu, C. Jan, and C. Leighton, Phys. Rev. B 81, 155110 (2010).
L. van den Dries, C. van Haesendonck, Y. Bruynseraede, and G. Deutscher, Phys. Rev. Lett. 46, 565 (1981).
H. Z. Lu, and S. Q. Shen, Chin. Phys. B 25, 117202 (2016).
P. W. Anderson, Phys. Rev. 109, 1492 (1958).
P. A. Lee, and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985).
B. L. Altshuler, D. Khmel’nitzkii, A. I. Larkin, and P. A. Lee, Phys. Rev. B 22, 5142 (1980).
H. L. Li, X. T. Xu, Y. Zhang, R. L. Gillen, L. P. Shi, and J. Robertson, Sci. Rep. 8, 10920 (2018), arXiv: 1712.00532.
N. F. Mott, Can. J. Phys. 34, 1356 (1956).
N. F. Mott, Philos. Mag. 6, 287 (1961).
K. Behnia, J. Phys.-Condens. Matter 27, 375501 (2015), arXiv: 1507.06084.
J. Ziman, Principles of the Theory of Solids (Cambridge University Press, Cambridge, 1960).
N. W. Ashcroft, and N. D. Mermin, Solid State Physics (Saunders College Publishing, New York, 1976).
N. W. Ashcroft, J. Non-Crystalline Solids 156–158, 621 (1993).
P. P. Edwards, T. V. Ramakrishnan, and C. N. R. Rao, J. Phys. Chem. 99, 5228 (1995).
J. Engelmayer, X. Lin, C. P. Grams, R. German, T. Fröhlich, J. Hemberger, K. Behnia, and T. Lorenz, Phys. Rev. Mater. 3, 051401(R) (2019), arXiv: 1902.05512.
Q. L. Wei, R. P. Li, C. Q. Lin, A. Han, A. Nie, Y. R. Li, L. J. Li, Y. C. Cheng, and W. Huang, ACS Nano 13, 13439 (2019).
T. Ghosh, M. Samanta, A. Vasdev, K. Dolui, J. Ghatak, T. Das, G. Sheet, and K. Biswas, Nano Lett. 19, 5703 (2019).
K. A. Müller, and H. Burkard, Phys. Rev. B 19, 3593 (1979).
X. Lin, Z. Zhu, B. Fauqué, and K. Behnia, Phys. Rev. X 3, 021002 (2013), arXiv: 1211.4761.
A. Bhattacharya, B. Skinner, G. Khalsa, and A. V. Suslov, Nat. Commun. 7, 12974 (2016), arXiv: 1607.06085.
M. Shayegan, V. J. Goldman, and H. D. Drew, Phys. Rev. B 38, 5585 (1988).
S. Noguchi, and H. Sakata, J. Phys. D-Appl. Phys. 13, 1129 (1980).
T. Minami, H. Sato, K. Ohashi, T. Tomofuji, and S. Takata, J. Cryst. Growth 117, 370 (1992).
J. L. Wang, L. W. Yang, C. W. Rischau, Z. K. Xu, Z. Ren, T. Lorenz, J. Hemberger, X. Lin, and K. Behniaa, npj Quantum Mater. 4, 61 (2019), arXiv: 1909.04278.
C. Yamanouchi, K. Mizuguchi, and W. Sasaki, J. Phys. Soc. Jpn. 22, 859 (1967).
M. J. Katz, S. H. Koenig, and A. A. Lopez, Phys. Rev. Lett. 15, 828 (1965).
W. Sasaki, Prog. Theor. Phys. Suppl. 57, 225 (1975).
M. Watanabe, Y. Ootuka, K. M. Itoh, and E. E. Haller, Phys. Rev. B 58, 9851 (1998), arXiv: cond-mat/9806267.
Author information
Authors and Affiliations
Corresponding author
Additional information
This work was supported by the National Natural Science Foundation of China (Grant No. 11904294), the Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ19A040005), and the foundation of Westlake Multidisciplinary Research Initiative Center (MRIC) (Grant No. MRIC20200402). We thank the support provided by Dr. Chao Zhang from Instrumentation and Service Center for Physical Sciences at Westlake University. We acknowledge Kamran Behnia and Wenbin Li for stimulating discussion.
Supporting information
Rights and permissions
About this article
Cite this article
Xu, Z., Wang, J., Wang, T. et al. Huge permittivity and premature metallicity in Bi2O2Se single crystals. Sci. China Phys. Mech. Astron. 64, 267312 (2021). https://doi.org/10.1007/s11433-021-1683-5
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11433-021-1683-5