Abstract
The aim of this work is to investigate the bulk stability of the solar-grade silicon versus the temperature processing, as well as the surface passivation versus the chemical oxidation. To this end, the quasi-steady-state photo-conductance (QSSPC) measurements showed degradation in minority carrier lifetime (τeff) after high-temperature processing that involves instability of the silicon wafers face to the thermal processes. Thereby, the bulk investigations indicated the formation of iron–boron (FeB) pairs. These latter are known to be active recombination centers. The FeB pairs formation was highlighted by a study based on sample illumination technique and the crossover point (∆ncop) identification in the injection-dependent lifetime curves. The surface passivation using both chemical and thermal oxide was used aiming to study the surface properties, in the presence of a thin layer of SiO2. The investigations using the hot probe technique revealed the appearance of an inversion layer, leading to type switching of the semiconductor at the surface, going from p- to n-type. This n-layer induces a high surface recombination velocity (SRV), leading to poor surface passivation. This is caused by the diffusion of the phosphorus toward the silicon surface, induced by the presence of a thin layer of SiO2 in the p-type solar-grade wafers.
Similar content being viewed by others
References
V. Hoffmann, K. Petter, J. Djordjevic-Reiss, E. Enebakk, J.D. Håkedal, R. Tronstad, T. Vlasenko, I. Buchovskaja, S. Beringov, M. Bauer, 23rd EUPVSEC, Valencia. Spain (2008). https://doi.org/10.4229/23rdEUPVSEC2008-2BO.3.3
D. Sarti, R. Einhaus, Sol. Ener. Mater. Sol. Cells. (2002). https://doi.org/10.1016/S0927-0248(01)00147-7
S. Rein, J. Geilker, W. Kwapil, G. Emanuel, I. Reis, A.K. Soiland, S. Grandum, R. Tronstad, 25th EUPVSEC and Exhibition, Valencia. Spain (2010). https://doi.org/10.4229/25thEUPVSEC2010-2BO.1.2
T. Bartel, K. Lauer, M. Heuer, M. Kaes, M. Walerysiak, F. Gibaja, J. Lich, J. Bauerd, F. Kirscht, Energy Procedia 27, 45–52 (2012)
S. Pizzini, Sol. Ener. Mater. Sol. Cells (2010). https://doi.org/10.1016/j.solmat.2010.01.016
D. MacDonald, A. Liu, A. Cuevas, B. Lim, J. Schmidt, Phys Status Solidi A: Appl. Mater. Sci. (2011). https://doi.org/10.1002/pssa.201000146
S. Rein, W. Kwapil, J. Geilker, G. Emanuel, M. Spitz, I. Reis, A. Weil, D. Biro, A.K. Soiland, E. Enebakk, R. Tronstad, 24th EUPVSEC, Hamburg. Germany (2009). https://doi.org/10.4229/24thEUPVSEC2009-2DO.2.3
J. Libal, S. Novaglia, M. Acciarri, S. Binetti, R. Petres, J. Arumughan, R. Kopecek, A. Prokopenko, J. App. Phys. (2008). https://doi.org/10.1063/1.3021300
S. Rein, S.W. Glunz, Appl. Phys. Lett. 82(7), 1054–1056 (2003)
K. Bothe, J. Schmidt, R. Hezel, 3rd WCPEC, Osaka. Japan (2003). https://doi.org/10.1109/WCPEC.2003.1306099
F. Rougieux, D. Macdonald, K.R. Mcintosh, A. Cuevas, 24th EUPVSEC, Hamburg. Germany (2009). https://doi.org/10.4229/24thEUPVSEC2009-2CO.3.6
A. Cuevas, IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (2002). https://doi.org/10.1109/COMMAD.2008.4802135
D. Macdonald, L. Geerligs, A. Azzizi, J. Appl. Phys. (2004). https://doi.org/10.1063/1.1637136
H.A. Kobayashi suha, O. Maida, M. Takahashi, H. Iwasa, J. Appl. Phys. (2003). https://doi.org/10.1063/1.1621720
N. Khelifati, D. Bouhafs, A. Mebarek-Azzem, S.E.-H. Abaidia, B. Palahouane, Y. Kouhlane, Acta Phys. Pol A (2016). https://doi.org/10.12693/APhysPolA.130.188
J. W. Chen, L. Zhao, H. Diao, B. Yan, S. Zhou, Y. Tang and W. Wang, Adv. Mat. Res. (2013). https://doi.org/10.4028/www.scientific.net/AMR.652-654.901
M. Maoudj, D. Bouhafs, N. Bourouba, N. Khelifati, A. El Amrani, R. Boufnik, A. Hamida-Ferhat, Acta Phys. Pol A (2017). https://doi.org/10.12693/APhysPolA.132.725
X. Zhu, X. Yu, P. Chen, Y. Liu, J. Vanhellemont, D. Yang, Int. j. photoenergy. (2015). https://doi.org/10.1155/2015/154574
D. Macdonald, T. Roth, P.N.K. Deenapanray, Appl. Phys. Lett. 89, 142107 (2006)
C. Möller, A. Laades, K. Lauer, Solid State Phenom. 205, 265 (2014)
D. Macdonald, A. Cuevas, J. Wong-Leung, J. App. Phys. 89, 12 (2001)
W.M. Bullis, H.R. Huff, J. Electrochem. Soc. 143, 1399 (1996)
M.A. Green, J. Appl. Phys. 67, 2944 (1990)
S. Rein, Lifetime spectroscopy, A Method of Defect Characterization in Silicon for Photovoltaic Applications 1st edn. (Springer 2005), pp. 50–53.
A.B. Sproul, J. Appl Phys. (1994). https://doi.org/10.1063/1.357521
A.S. Grove, O. Leistiko, C.T. Sah, J. Appl. Phys. (1964). https://doi.org/10.1063/1.1713825
Acknowledgements
The authors gratefully acknowledge the financial support from the Directorate General for Scientific Research and Technological Development (DGRSDT–Algerian Ministry of Higher Education and Scientific Research).
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Maoudj, M., Bouhafs, D., Bourouba, N.E. et al. Study of the electrical properties of < 100 > Cz p-type solar-grade silicon wafers against the high-temperature processes. Appl. Phys. A 127, 407 (2021). https://doi.org/10.1007/s00339-021-04578-7
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-021-04578-7