Combined effects of the hydrostatic pressure and temperature on the self-polarization in a finite quantum well under laser field

Highlights

• The square quantum well is considered.

• The effects of hydrostatic pressure and temperature on self-polarization have been calculated under laser field.

• The variational and finite differences calculations have been performed.

• Laser field parameter, hydrostatic pressure and temperature are important factor.

Abstract

In this study, the self-polarization and binding energy of the donor impurity atom in the laser field applied $G{a}_{1-x}A{l}_{x}As/GaAs$ quantum well are investigated under the combined influence of hydrostatic pressure and temperature. Variation of self-polarization and binding energy depending on temperature, hydrostatic pressure, impurity position, well width and laser field parameters are shown. Using the effective mass approximation, subband energy has been found by finite difference method and impurity energy has been found by variation method. Our results showed that hydrostatic pressure and temperature have a noticeable effect on the calculated self-polarization and binding energy in a quantum well under the effect of the laser field. We think that the results obtained will be useful in determining the physical properties of the quantum well under the influence of laser field, hydrostatic pressure and temperature.

Introduction

In recent years, semiconductor materials are of great importance in electronic material production technology. There are many studies examining the physical, electronic and optical properties of semiconductor materials [[1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20], [21], [22], [23], [24], [25], [26], [27], [28], [29], [30]]. Therefore, quantum wells(QWs), wires(QWWs) and dots(QDs) created using semiconductor materials are studied in detail in terms of understanding the properties of electronic devices. In the literature, many studies have been made investigating the effects of external influences such as electric field, magnetic field, hydrostatic pressure, temperature and laser on these structures [[1], [2], [3], [4], [5]]. Under these external influences, it is possible to find many studies in which calculations such as binding energy (E_b), polarization, band structures and optical transitions for confinement electron in doped semiconductors are made [[6], [7], [8], [9]]. In quantum wells, we can find many studies in which these calculations are theoretically made. In particular, laser field effect in quantum wells is of great importance in understanding the optical properties of semiconductor materials.

Studies on Self-polarization (SP), which is defined as the effect of the potential wall on the donor atom, have been made in the literature. While many studies have been made on SP under the influence of electric and magnetic fields [[10], [11], [12]], it has been seen that there is only one study examining the laser field effect on this subject [13]. In the literature, there is no study examining the effect of hydrostatic pressure and temperature effects on SP in quantum wells under laser field. Therefore, the main purpose of this study is to examine the change of SP under the effect of hydrostatic and temperature.

In this work, we have concerned with the theoretical study of the effects of hydrostatic pressure and temperature on the E_b and SP in a finite square QWs under the laser field. This paper is organized as follows: in section 2, we describe the theory. We presented and discussed our numerical results in chapter 3. Finally, conclusions are presented in chapter 4.