Regular paperDesign of X-band SSPA based on GaN HEMT for telemetry subsystem of near-earth space missions
Graphical abstract
Introduction
One of the most significant issues in space applications is the development of small, lightweight, low power consumption systems due to very limited area, weight, and power budget in spacecraft and satellites, and onboard telecommunication systems are no exception. Fig. 1 shows the Radio Frequency (RF) frontend of a typical transmitter for a space telemetry subsystem. The Intermediate Frequency (IF) signal after upconverted to RF signal must be amplified before transmission. Usually, there are two types of amplifiers in this step, first a Driver Power Amplifier (DPA), and second a High Power Amplifier (HPA). As exhibited in Fig. 1, the final block before the antenna is an HPA. In this block, the power of the RF signal reaches the maximum value. Because of high power consumption, the efficiency of this stage is the most important block in determining the efficiency of the transmitter. Therefore, the design of a highly efficient HPA is a very important step in this regard [1]. Table 1 shows the specifications of X-band HPAs for several space programs [2], [3], [4], [5], [6], [7], [8], [9], [10]. As mentioned in Table 1, the Traveling-Wave Tube Amplifier (TWTA) and the Solid State Power Amplifier (SSPA) technologies are both used by the Japan Aerospace Exploration Agency (JAXA), the European Space Agency (ESA) and the U.S. National Aeronautics and Space Administration (NASA) for different programs and missions. As shown in Table 1, TWTAs have higher efficiency compared to SSPAs and so they are preferred for high power transmitters because they can reduce power consumption and heat dissipation of system [2]. In contrast, SSPAs are superior to TWTAs in terms of mechanical environment tolerance, lifetime, footprint, area, weight, and discharge risk, because TWTAs use a fragile sculpted-glass tube and require high voltage (kV) operation [11], [12]. Therefore, despite their relatively lower efficiency, SSPAs are used especially in missions where weight and volume budget is very limited. It is also worth mentioning that the difference between the efficiency of TWTAs and SSPAs is very slight when low output power (for instance less than 50 W) is required. Hence, because of the less power requirement in the low earth orbit missions, SSPAs are the preferred choice.
Section snippets
Technology
There are two solutions for realizing an SSPA, namely, Hybrid Microwave Integrated Circuit (HMIC) technology, and Monolithic Microwave Integrated Circuit (MMIC) technology [13]. In an MMIC, all the components active and/or passive are formed and processed simultaneously on a single substrate using various deposition techniques. Different materials used for the construction of MMICs include GaAs, InP, GaN, SiGe, etc. In fact, all the components such as diodes, transistors, capacitors,
Simulation, Test and Measurement
The full-wave CST simulation including packaging and shielding is carried out and then the final SNP file was exported to ADS for final simulation. This technique helps us for taking into account all of the Electromagnetic Compatibility (EMC) parameters. We have used The HMC441LP3E (a GaAs pHEMT MMIC Medium Power Amplifiers) for driving the proposed HPA. Also a Bias Sequencer Circuit (BSC) feeds the bias voltages of the proposed HPA. BSC has an independent package and is placed back to back
Conclusion
The design of high efficiency and linearity HPA for X-Band space applications was presented. The proposed HPA is the first implemented GaN HEMT higher than 10 GHz, E class, narrowband, TL implemented with independently gm tuning HMIC. We have optimized the proposed HPA with gm tuning techniques to improve the overall linearity without any additional circuit. Also, with regards to uncertainties in the substrate specs, we have introduced a simple technique for substrate parameters measurement in
Declaration of Competing Interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Peiman Aliparast was born in Tabriz, Iran. He received the M.Sc. degree from Urmia University, Urmia, Iran, in 2007 and Ph.D. degree from University of Tabriz, Tabriz, Iran, in 2012 both in Electronics Engineering. From 2004 to 2008, he was with the Microelectronics Research Laboratory in Urmia University, Urmia, Iran and from 2008 to 2012, he was a research assistant in Integrated Circuits Research Laboratory, University of Tabriz, Tabriz, Iran. He is currently an assistant professor and
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Peiman Aliparast was born in Tabriz, Iran. He received the M.Sc. degree from Urmia University, Urmia, Iran, in 2007 and Ph.D. degree from University of Tabriz, Tabriz, Iran, in 2012 both in Electronics Engineering. From 2004 to 2008, he was with the Microelectronics Research Laboratory in Urmia University, Urmia, Iran and from 2008 to 2012, he was a research assistant in Integrated Circuits Research Laboratory, University of Tabriz, Tabriz, Iran. He is currently an assistant professor and director of Microsystems Lab. in Aerospace Research Institute (Ministry of Science, Research and Technology), Tehran, Iran. His research interests are smart CMOS image sensors for biomedical applications, RFIC and MMIC for space telecommunication systems, analog and digital integrated circuit design for fuzzy and neural network applications, analog integrated filter design and high-speed high-resolution digital to analog converters. He is member of Iran Microelectronics Association (IMA).