Abstract
Copper-indium-gallium-selenide (CIGS) alloys are successfully applied in thin-film solar cells. For a better use of the solar spectrum, they also offer the possibility of multijunction devices by tuning the composition in the different layers. As-grown CIGS is intrinsically p-type due to copper vacancies (), but n-type doping is also useful for applications. While can be easily turned n-type, cannot, and this represents a problem, because increasing the band gap of CIGS requires a high ratio. Investigating the effect of hydrogen on by an optimized hybrid functional, we show that hydrogenation from an atomic source as, e.g., by a hydrogen plasma treatment, can turn the material n-type due to the formation of shallow donor complexes, while implantation, producing an internal hydrogen reservoir, can be used to produce semi-insulating material. We also show that under normal process conditions, unintentional hydrogen incorporation does not have a significant effect on .
- Received 21 December 2020
- Revised 4 February 2021
- Accepted 11 March 2021
- Corrected 4 May 2021
DOI:https://doi.org/10.1103/PhysRevApplied.15.044021
© 2021 American Physical Society
Physics Subject Headings (PhySH)
Corrections
4 May 2021
Correction: The sentence preceding Eq. (1) was erroneously omitted during the production process and has been restored. The names of complexes were set improperly during the production process in various locations in text and have been fixed.