Skip to main content
Log in

TlGaN Quantum-Dot Photodetectors

  • PHYSICS OF SEMICONDUCTOR DEVICES
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga8Tl2N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.

Similar content being viewed by others

REFERENCES

  1. K. T. Huang, R. M. Cohen, and G. B. Stringfellow, J. Cryst. Growth 156, 320 (1995).

    Article  ADS  Google Scholar 

  2. P. T. Staveteig, Y. H. Choi, G. Labeyrie, E. Bigan, and M. Razeghi, Appl. Phys. Lett. 64, 460 (1994).

    Article  ADS  Google Scholar 

  3. A. Assali and M. Bouslama, Infrared Phys. Technol. 81, 175 (2017).

    Article  ADS  Google Scholar 

  4. H. Hassan, S. M. Abdulalmuhsin, and Amin H. Al-Khursan, Optical and Quantum Electronics 52, 55 (2020).

  5. M. J. Winiarski, Mater. Chem. Phys. 198, 209 (2017).

    Article  Google Scholar 

  6. M. J. Winiarski, Comput. Mater. Sci. 108, 14 (2015).

    Article  Google Scholar 

  7. B. Al-Nashy, A. G. Al-Shatravi, M. Abdullah, and A. H. Al-Khursan, Res. Phys. 12, 1492 (2019).

    Google Scholar 

  8. S. L. Chuang, Physics of Photonic Devices, 2nd ed. (Wiley, New Jersey, 2009).

    Google Scholar 

  9. T. Dakhil, S. M. Abdulalmuhsin, and A. H. Al-Khursan, Micro Nano Lett. 13, 1185 (2018).

    Article  Google Scholar 

  10. S. Mou, J. V. Li, and S. L. Chuang, IEEE J. Quantum Electron. 45, 737 (2009).

    Article  ADS  Google Scholar 

  11. S. N. Dwara and A. H. Al-Khursan, Appl. Opt. 54, 9722 (2015).

    Article  ADS  Google Scholar 

  12. J. Kim and S. L. Chuang, IEEE J. Quantum Electron. 42, 942 (2006).

    Article  ADS  Google Scholar 

  13. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, IEEE J. Sel. Top. Quantum Electron. 3, 196 (1997).

    Article  ADS  Google Scholar 

  14. S. N. Dwara and A. H. Al-Khursan, Appl. Opt. 55, 5591 (2016).

    Article  ADS  Google Scholar 

  15. E. V. Shah and D. R. Roy, Mater. Chem. Phys. 200, 368 (2017).

    Article  Google Scholar 

  16. A. K. Kaka and A. H. Taha, Int. J. Adv. Res. 4, 1493 (2016).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. H. Al-Khursan.

Ethics declarations

The authors declare that they have no conflict of interest.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Al-Shatravi, A.G., Hassan, H., Abdulalmuhsin, S.M. et al. TlGaN Quantum-Dot Photodetectors. Semiconductors 55, 359–362 (2021). https://doi.org/10.1134/S1063782621030039

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782621030039

Keywords:

Navigation