Abstract
High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largely depended on the etching induced surface damages. To overcome this, a controllable GaN etching method was developed using inductively coupled plasma reactive ion etching (ICP-RIE) by controlling radio frequency (RF) power, and DC bias. The etching rate, DC bias, and root-mean-square surface roughness were measured as a function of bias power under different RF, 40 and 13.56 MHz. The effects of ICP power and chlorine to argon percentage were systematically studied. An extremely slow etching rate and low-damage surface were achieved by reducing DC bias power to 25 W under RF 40 MHz. Ni|Au Schottky diodes were fabricated and characterized. The diode fabricated on the 40-MHz RF etching GaN surface has a much lower ideality factor and higher barrier height than non-etched GaN and RF 13.56 MHz etching GaN.
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REFERENCES
J. J. Wierer, A. David, and M. M. Megens, Nat. Photon. 3, 163 (2009).
T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, and S. Sakai, J. Cryst. Growth 235, 177 (2002).
T. Detchprohm, M. Zhu, Y. Li, L. Zhao, S. You, C. Wetzel, E. A. Preble, T. Paskova, and D. Hanser, Appl. Phys. Lett. 96, 051101 (2010).
D. W. Runton, B. Trabert, J. B. Shealy, and R. Vetury, IEEE Microwave Mag. 14, 82 (2013).
Y. F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IEEE Trans. Electron Dev. 48, 586 (2001).
T. Lenka and A. Panda, Semiconductors 45, 650 (2011).
G. F. McLane, L. Casas, S. J. Pearton, and C. R. Abernathy, Appl. Phys. Lett. 66, 3328 (1995).
J. M. Lee, K. M. Chang, S. W. Kim, C. Huh, I. H. Lee, and S. J. Park, J. Appl. Phys. 87, 7667 (2000).
C. C. Kao, H. W. Huang, J. Y. Tsai, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, Mater. Sci. Eng. B 107, 283 (2004).
R. J. Shul, G. B. Mcclellan, S. A. Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barratt, R. F. Karlicek, Jr., C. Tran, and M. Schurman, Appl. Phys. Lett. 69, 1119 (1996).
L.-S. Li, X. Xu, F. Liu, Q.-H. Zhou, Z.-F. Nie, Y.-Z. Liang, and R.-Q. Liang, Chin. Phys. Lett. 25, 2144 (2008).
B. Kim and B. T. Lee, IEEE Trans. Plasma Sci. 30, 2074 (2002).
Y. Sun, X. Kang, Y. Zheng, K. Wei, P. Li, W. Wang, X. Liu, and G. Zhang, Nanomaterials 10, 657 (2020).
S. D. Burnham, K. Boutros, P. Hashimoto, C. Butler, D. W. S. Wong, M. Hu, and M. Micovic, Phys. Status Solidi C 7, 2010 (2010).
Y. Jiang, Z.-Y. Wan, G.-N. Zhou, M.-Y. Fan, G.-Y. Yang, R. Sokolovskij, G.-R. Xia, Q. Wang, and H.-Y. Yu, Chin. Phys. Lett. 37, 68503 (2020).
E. D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S. P. Den Baars, L. A. Coldren, U. K. Mishra, and E. L. Hu, Appl. Phys. Lett. 76, 3941 (2000).
A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998).
S. J. Pearton, E. A. Douglas, R. J. Shul, and F. Ren, J. Vac. Sci. Technol. A 38, 020802 (2020).
Q. Fan, S. Chevtchenko, X. Ni, S.-J. Cho, F. Yun, and H. Morkoç, J. Vac. Sci. Technol. B 24, 1197 (2006).
F. A. Khan, L. Zhou, V. Kumar, and I. Adesida, J. Vac. Sci. Technol. B 19, 2926 (2001).
S. Yamada, M. Omori, H. Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, and T. Kachi, Appl. Phys. Express 13, 016505 (2020).
M. J. Cooke and G. Hassall, Plasma Sources Sci. Technol. 11, A74 (2002).
S. Zhou, B. Cao, and S. Liu, Appl. Surf. Sci. 257, 905 (2010).
T. T. Wang, X. Wang, X.-B. Li, J.-C. Zhang, and J.-P. Ao, Chin. Phys. Lett. 36, 057101 (2019).
C. Cheng and J. Si, Phys. B (Amsterdam, Neth.) 406, 3098 (2011).
Funding
This work was supported by Changchun University of Science and Technology under grant nos. 6141B010328 and XJJLG201510. It was accomplished in Nano Fabrication Facility of Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences.
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Zhang, XM., Yan, CL., Yu, GH. et al. High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage. Semiconductors 55, 387–393 (2021). https://doi.org/10.1134/S1063782621030180
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DOI: https://doi.org/10.1134/S1063782621030180