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Non-isothermal crystallization kinetics of Se82−xTe18Gex (0 ≤ x ≤ 12) for memory applications

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Abstract

The current paper explains the kinetic variables of crystallization kinetics. Se82−xTe18Gex (0 ≤ x ≤ 12) amorphous glassy materials were synthesized by the melt quench technique. XRD, SEM, and EDX characterizations were done to analyze the structure and elemental composition of the prepared amorphous glassy alloys. DSC measurements were taken to study the phase transition of the amorphous glassy alloys under identical conditions. For the crystallization kinetics, Kissinger, Ozawa, Tang, and Starink iso-conversional methods were used. The order of dimensional growth and frequency factors were examined with the help of the Matusita–Sakka and Augis–Bennett methods, respectively. Also, the compositional dependence of kinetic parameters was studied for the prepared Se-Te-Ge (STG) glassy alloys.

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Acknowledgements

The authors are thankful to ACMS, Indian Institute of Technology, Kanpur, India, for providing the experimental facilities.

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Authors and Affiliations

  1. Amorphous Semiconductor Research Lab, Department of Physics and Materials Science, M. M. M. University of Technology, Gorakhpur, 273010, India

    Vandita Rao, Pravin Kumar Singh & D. K. Dwivedi

  2. Department of Electronics and Communication Engineering, M. M. M. University of Technology, Gorakhpur, 273010, India

    Pooja Lohia

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  1. Vandita Rao
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  2. Pravin Kumar Singh
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  4. D. K. Dwivedi
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Correspondence to D. K. Dwivedi.

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Rao, V., Singh, P.K., Lohia, P. et al. Non-isothermal crystallization kinetics of Se82−xTe18Gex (0 ≤ x ≤ 12) for memory applications. Indian J Phys 96, 1075–1085 (2022). https://doi.org/10.1007/s12648-021-02036-x

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