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Surface Modification of ZnO Nanowires with CuO: A Tool to Realize Highly-Sensitive H2S Sensor

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Abstract

Hydrothermally grown ZnO nanowires (NWs) have been successfully synthesized and surface modified by an ultrathin layer of CuO using dip coating technique to achieve a highly sensitive H2S sensor. XRD analysis confirmed the hexagonal structure of ZnO without any Cu sub-oxide peaks. After CuO modification, the peak shift was observed in the electronic states of O and assigned to the defects and increase in adsorbed oxygen species. Similarly, a red shift was also observed in the band edge absorption after CuO modification arising due to defects. The sensor film showed an overall n-type character as confirmed using I(V) characteristics. Interestingly, sensor response kinetics towards H2S were enhanced after CuO modification. The highest sensor response value of 298 was measured towards 10 ppm H2S at 150°C for CuO:ZnO NWs sample having 1.26 at % of Cu. This improved sensor response has been attributed mainly to the formation of randomly distributed p–n nano-hetero-junctions between p-type CuO and n-type ZnO over the sensor surface. In particular, the p–n nano-hetero-junctions collapsed due to conversion of semiconducting CuO into metallic CuS after the unique interaction with H2S.

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REFERENCES

  1. N. S. Ramgir, S. K. Ganapathi, M. Kaur, N. Datta, K. P. Muthe, D. K. Aswal, S. K. Gupta, and J. V. Yakhmi, Sens. Actuators, B 151, 90 (2010).

    Article  Google Scholar 

  2. S. K. Pandey, K. H. Kim, and K. T. Tang, Trends Anal. Chem. 32, 87 (2012).

    Article  Google Scholar 

  3. F. I. M. Ali, F. Awwad, Y. E. Greish, and S. T. Mahmoud, IEEE Sens. J. 19, 2394 (2019).

    Article  ADS  Google Scholar 

  4. K. Wetchakun, T. Samerjai, N. Tamaekong, C. Liewhiran, C. Siriwong, V. Kruefu, A. Wisitsoraat, A. Tuantranont, and S. Phanichphant, Sens. Actuators, B 160, 580 (2011).

    Article  Google Scholar 

  5. G. Korotcenkov, Mater. Sci. Eng. B 139, 1 (2007).

    Article  Google Scholar 

  6. V. S. Bhati, M. Hojamberdiev, and M. Kumar, Energy Rep. 6, 46 (2020).

    Article  Google Scholar 

  7. P. Bharathi, M. K. Mohan, V. Shalini, S. Harish, M. Navaneethan, J. Archana, M. Ganesh Kumar, P. Dhivya, S. Ponnusamy, M. Shimomura, and Y. Hayakawa, Appl. Surf. Sci. 499, 143857 (2020).

    Article  Google Scholar 

  8. A. P. Sharma, P. Dhakal, D. K. Pradhan, M. K. Behera, B. Xiao, and M. Bahoura, AIP Adv. 8, 095219 (2018).

    Article  ADS  Google Scholar 

  9. N. S. Ramgir, D. Goyal, C. P. Goyal, N. Datta, M. Kaur, A. K. Debnath, D. K. Aswal, and S. K. Gupta, AIP Conf. Proc. 1665, 080045 (2015).

    Article  Google Scholar 

  10. J. Bai and B. Zhou, Chem. Rev. 114, 10131 (2014).

    Article  Google Scholar 

  11. R. Kumar, O. Al-Dossary, G. Kumar, and A. Umar, Nano-Micro Lett. 7, 97 (2015).

    Article  Google Scholar 

  12. M. W. Ahn, K. S. Park, J. H. Heo, J. G. Park, D. W. Kim, K. J. Choi, J. H. Lee, and S. H. Hong, Appl. Phys. Lett. 93, 263103 (2008).

    Article  ADS  Google Scholar 

  13. F. Huber, S. Riegert, M. Madel, and K. Thonke, Sens. Actuators, B 239, 358 (2017).

    Article  Google Scholar 

  14. A. N. A. Anasthasiya, R. K. Kampara, P. K. Rai, and B. G. Jeyaprakash, Appl. Surf. Sci. 449, 244 (2018).

    Article  ADS  Google Scholar 

  15. N. Ramgir, R. Bhusari, N. S. Rawat, S. J. Patil, A. K. Debnath, S. C. Gadkari, and K. P. Muthe, Mater. Sci. Semicond. Process. 106, 104770 (2020).

    Article  Google Scholar 

  16. J. H. Kim, A. Mirzaei, H. W. Kim, and S. S. Kim, ACS Appl. Mater. Interfaces 11, 24172 (2019).

    Article  Google Scholar 

  17. C. T. Quy, C. M. Hung, N. van Duy, N. D. Hoa, M. Jiao, and H. Nguyen, J. Electron. Mater. 46, 3406 (2017).

    Article  ADS  Google Scholar 

  18. J. Guo, J. Zhang, M. Zhu, D. Ju, H. Xu, and B. Cao, Sens. Actuators, B 199, 339 (2014).

    Article  Google Scholar 

  19. S. W. Choi and S. S. Kim, Sens. Actuators, B 168, 8 (2012).

    Article  Google Scholar 

  20. R. N. Mariammal and K. Ramachandran, Mater. Res. Bull. 100, 420 (2018).

    Article  Google Scholar 

  21. H. Tian, H. Fan, G. Dong, L. Ma, and J. Ma, RSC Adv. 6, 109091 (2016).

  22. N. Datta, N. Ramgir, M. Kaur, S. Kailasa Ganapathi, A. K. Debnath, D. K. Aswal, and S. K. Gupta, Sens. Actuators, B 166–167, 394 (2012).

    Article  Google Scholar 

  23. V. R. Katti, A. K. Debnath, K. P. Muthe, M. Kaur, A. K. Dua, S. C. Gadkari, S. K. Gupta, and V. C. Sahni, Sens. Actuators, B 96, 245 (2003).

    Article  Google Scholar 

  24. Q. Simon, D. Barreca, A. Gasparotto, C. Maccato, T. Montini, V. Gombac, P. Fornasiero, O. I. Lebedev, S. Turnere, and G. V. Tendelooe, J. Mater. Chem. 22, 11739 (2012).

    Article  Google Scholar 

  25. J. Zhao, C. Zhang, and D. Wang, Mater. Sci. Semicond. Process. 35, 55 (2015).

    Article  Google Scholar 

  26. C. Zhou, L. Xu, J. Song, R. Xing, S. Xu, D. Liu, and H. Song, Sci. Rep. 4, 7382 (2014).

    Article  ADS  Google Scholar 

  27. W. Ang, X. Li, S. Li, Y.-J. Liu, and W.-W. Li, Chin. Phys. Lett. 30, 046202 (2013).

    Article  ADS  Google Scholar 

  28. P. P. Subha and M. K. Jayaraj, BMC Chem. 13, 4 (2019).

  29. N. S. Ramgir, M. Ghosh, P. Veerender, N. Datta, M. Kaur, D. K. Aswal, and S. K. Gupta, Sens. Actuators, B 156, 875 (2011).

    Article  Google Scholar 

  30. C. P. Goyal, D. Goyal, S. K. Rajan, N. S. Ramgir, Y. Shimura, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda, and S. Ponnusamy, Crystals 10, 188 (2020).

    Article  Google Scholar 

  31. A. Khare, S. Gnanavel, R. V. Karthik, S. Murugan, and Y. Sivalingam, Int. J. Pure Appl. Math. 119, 15813 (2018).

    Google Scholar 

  32. C. P. Goyal, D. Goyal, V. Ganesh, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda, and S. Ponnusamy, Phys. Solid State 62, 1796 (2020).

    Article  ADS  Google Scholar 

  33. M. Jacquemin, M. J. Genet, E. M. Gaigneaux, and D. P. Debecker, Chem. Phys. Chem. 14, 3618 (2013).

    Article  Google Scholar 

  34. M. M. Alam, A. M. Asiri, M. T. Uddin, M. A. Islam, and M. M. Rahman, RSC Adv. 8, 12562 (2018).

  35. R. Ahmad, N. Tripathy, M. S. Ahn, K. S. Bhat, T. Mahmoudi, Y. Wang, J. Y. Yoo, D. W. Kwon, H. Y. Yang, and Y. B. Hahn, Sci. Rep. 7, 1 (2017).

    Article  Google Scholar 

  36. N. Datta, N. S. Ramgir, S. Kumar, P. Veerender, M. Kaur, S. Kailasaganapathi, A. K. Debnath, D. K. Aswal, and S. K. Gupta, Sens. Actuators, B 202, 1270 (2014).

    Article  Google Scholar 

  37. N. S. Ramgir, C. P. Goyal, P. K. Sharma, U. K. Goutam, S. Bhattacharya, N. Datta, M. Kaur, A. K. Debnath, D. K. Aswal, and S. K. Gupta, Sens. Actuators, B 188, 525 (2013).

    Article  Google Scholar 

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ACKNOWLEDGMENTS

Authors acknowledge the Nanotechnology Research Centre, SRM IST and Center for Instrumental Analysis, Shizuoka University for providing characterization facilities. Authors thank to Dr. S. Yuvraj and Mr. C. David for helping in I(V) measurement studies.

Funding

We are thankful to SRM IST for providing financial support and research facilities.

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Authors and Affiliations

  1. Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM IST, 603203, Tamil, Nadu, Kattankulathur, India

    C. P. Goyal, D. Goyal, M. Navaneethan, C. Muthamizhchelvan & S. Ponnusamy

  2. Graduate School of Science and Technology, Shizuoka University, 4328011, Hamamatsu, Japan

    C. P. Goyal & H. Ikeda

  3. Research Institute of Electronics, Shizuoka University, 4328011, Hamamatsu, Japan

    C. P. Goyal, Y. Hayakawa & H. Ikeda

  4. Technical Physics Division, Bhabha Atomic Research Center, 400085, Mumbai, India

    N. S. Ramgir

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  1. C. P. Goyal
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Goyal, C.P., Goyal, D., Ramgir, N.S. et al. Surface Modification of ZnO Nanowires with CuO: A Tool to Realize Highly-Sensitive H2S Sensor. Phys. Solid State 63, 460–467 (2021). https://doi.org/10.1134/S1063783421030070

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