Abstract
The characteristics of MIS structures based on insulating PbSnTe:In films grown by molecular beam epitaxy (MBE) with compositions near the band inversion are studied. It is shown that a number of their features can be induced by a ferroelectric phase transition with the Curie temperature in the range of 15-20 K. The injection and detection of spin-polarized electrons in PbSnTe:In are studied by using ferromagnetic contacts Co and Co\({}_{40}\)Fe\({}_{40}\)B\({}_{20}\). A spin-valve effect is discovered by measuring the magnetoresistance in local geometry at a distance of more than 30 \(mu\)m from ferromagnetic contacts. The presence of a surface spin-polarized state with a linear dispersion law is demonstrated by means of the photoemission with angular and spin resolution.
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This study was financially supported in part by the Russian Foundation for Basic Research (grant no. 17-02-00575) and the Russian Science Foundation (grant no. 17-02-01047).
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Translated by E. Glushachenkova
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Tarasov, A.S., Golyashov, V.A., Ishchenko, D.V. et al. Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator. Optoelectron.Instrument.Proc. 56, 553–557 (2020). https://doi.org/10.3103/S8756699020050131
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DOI: https://doi.org/10.3103/S8756699020050131