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The mitigation of signal integrity issues in coupled MWCNT bundles and a comparison with Cu interconnects

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Abstract

In the nanoscale regime, carbon nanotubes (CNTs) are being considered as a future alternative interconnect material for traditional copper (Cu) wires in integrated circuit technology. The advances in device scaling and the continuous increase of clock frequencies in very large-scale integration technology have resulted in signal integrity (SI) issues. The reduction of such SI issues in coupled multiwalled CNT bundle interconnects is evaluated herein. The worst-case crosstalk delay and peak noise voltage are simulated for three-line coupled interconnects at the 22-nm technology node. To minimize the crosstalk effects, a passive shielding technique is proposed, resulting in reductions of 15.3% and 40.8% in the dynamic in-phase and out-phase crosstalk condition, respectively. The SI of single- and two-line coupled MWCNT bundle interconnects is also investigated based on eye diagrams in a channel simulator and compared with that of Cu interconnects. The eye-opening height is significantly enhanced in the MWCNT bundle and Cu interconnects when using the proposed technique. Moreover, the MWCNT bundle has a higher eye-opening compared with its Cu counterpart.

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Acknowledgements

This research has been supported by the Visvesvaraya Ph.D. scheme, MeitY, Govt. of India. MEITY-PHD-1898. The research grants file number is PhD-MLA-4(63)/2015-16. The authors would like to thank the Principal, University College of Engineering, and Osmania University for support.

The authors also thank the reviewers for suggesting revisions to this paper.

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  1. Department of Electronics and Communication Engineering, University College of Engineering, Osmania University, Hyderabad, Telangana, 50007, India

    Raju Mudavath, Rajendra Naik Bhukya & Praneet Raj Jeripotula

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Correspondence to Raju Mudavath.

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Mudavath, R., Bhukya, R.N. & Jeripotula, P.R. The mitigation of signal integrity issues in coupled MWCNT bundles and a comparison with Cu interconnects. J Comput Electron 20, 1430–1438 (2021). https://doi.org/10.1007/s10825-021-01684-w

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