Abstract
We have investigated Schottky barrier diode based on MoTe\(_2\) with Au and Cr/Au asymmetric contacts. While many metals show strong Fermi level pinning close to the valence band of MoTe\(_2\), one can change MoTe\(_2\)-Au Schottky contact via simple thermal annealing. The Schottky diode showed a clear rectification operation with a rectification ratio of 10–100 and the ideality factor of \(\sim\) 1.5. Utilising the ambipolar nature of MoTe\(_2\), we could control the direction of rectification by changing the majority carrier with a gate voltage.
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This paper was written as part of Konkuk University’s research support program for its faculty on sabbatical leave in 2018.
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You, Y.G., Lee, C.H., Choi, I. et al. Schottky barrier diode based on multilayer MoTe\(_2\) and the gate control of the direction of rectification. J. Korean Phys. Soc. 78, 719–722 (2021). https://doi.org/10.1007/s40042-021-00133-y
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DOI: https://doi.org/10.1007/s40042-021-00133-y