Topological phase transition in Sb-doped Mg3Bi2 monocrystalline thin films

Tong Zhou, Mingyu Tong, Yun Zhang, Xiangnan Xie, Zhen-Yu Wang, Tian Jiang, Xie-Gang Zhu, and Xin-Chun Lai
Phys. Rev. B 103, 125405 – Published 3 March 2021
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Abstract

Mg3Bi2 has been proved to be a semimetal with topological surface states (referred to as a topological semimetal, TSM) in the presence of spin-orbit coupling (SOC), and predicted to be a type-II nodal line semimetal (NSM) in the absence of SOC. It is possible to tune the effective SOC in Mg3Bi2 by substituting the heavy Bi atom with lighter atoms, such as Sb or As, which results in topological phase transitions. Here in our work we investigate the evolution of the transport properties and band structures of Mg3Bi2 by doping different concentrations of Sb through molecular beam epitaxy. Our results demonstrate the existence of phase transitions of TSM to trivial semimetal (SM) and SM to trivial insulator, with Sb concentration x at x10.440.64 and x21.39, respectively. Further theoretical calculations give values of x10.523 and x21.10, which agrees well with our experimental results. And all these results are concluded into a Mg3Bi2xSbx phase diagram. Our work will stimulate more explorations to the possibilities of the realization of type-II NSM in Mg3Bi2 by various elements substitution.

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  • Received 10 October 2020
  • Accepted 19 February 2021

DOI:https://doi.org/10.1103/PhysRevB.103.125405

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Tong Zhou1,2,3,4, Mingyu Tong5, Yun Zhang1,4, Xiangnan Xie2, Zhen-Yu Wang2,6,7,*, Tian Jiang2,3,†, Xie-Gang Zhu1,4,‡, and Xin-Chun Lai1

  • 1Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, Sichuan, People's Republic of China
  • 2State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, People's Republic of China
  • 3Beijing Institute for Advanced Study, National University of Defense Technology, Beijing 100020, People's Republic of China
  • 4Institute of Materials, China Academy of Engineering Physics, Mianyang 621700, Sichuan, People's Republic of China
  • 5College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, People's Republic of China
  • 6National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100010, People's Republic of China
  • 7Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China

  • *oscarwang2008@sina.com
  • tjiang@nudt.edu.cn
  • zhuxiegang@caep.cn

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Issue

Vol. 103, Iss. 12 — 15 March 2021

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