Abstract
It is shown for the first time that thin boron phosphide (BP) layers on silicon substrates can be formed by low-temperature plasma-enhanced atomic layer deposition at 250°C. Experiments demonstrated the possibility of using these BP/Si interfaces as selective hole contacts to silicon in solar cells.
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This work was supported in part by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. 0791-2020-0004.
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Translated by P. Pozdeev
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Gudovskikh, A.S., Kudryashov, D.A., Baranov, A.I. et al. A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition. Tech. Phys. Lett. 47, 96–98 (2021). https://doi.org/10.1134/S1063785021010211
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DOI: https://doi.org/10.1134/S1063785021010211