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Features of the Semiconductor Surface structure containing silver particles on the porous Silicon Film Surface Formed by Metal-Assisted Etching

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Abstract

The porous silicon film surface region containing silver particles is studied by scanning electron microscopy and Raman spectroscopy. The porous silicon film is formed by metal-assisted etching of a single-crystal silicon substrate. It is found that the distribution of silver particles is controlled by the porous layer morphology. The formation of silver particles by chemical deposition results in certain smoothing of the por-Si film surface relief. In this case, the silicon crystallite structure does not change significantly.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    N. N. Melnik

  2. Ryazan State University named for S. Yesenin, 390000, Ryazan, Russia

    V. V. Tregulov & A. I. Ivanov

  3. Ryazan State Radio Engineering University, 390005, Ryazan, Russia

    N. B. Rybin & N. V. Rybina

Authors
  1. N. N. Melnik
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  2. V. V. Tregulov
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  3. N. B. Rybin
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  4. N. V. Rybina
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  5. A. I. Ivanov
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Correspondence to N. N. Melnik, V. V. Tregulov or N. B. Rybin.

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Melnik, N.N., Tregulov, V.V., Rybin, N.B. et al. Features of the Semiconductor Surface structure containing silver particles on the porous Silicon Film Surface Formed by Metal-Assisted Etching. Bull. Lebedev Phys. Inst. 48, 1–4 (2021). https://doi.org/10.3103/S1068335621010048

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  • DOI: https://doi.org/10.3103/S1068335621010048

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