A 23.3 dBm CMOS power amplifier with third-order gm cancellation linearization technique achieving OIP3 of 34 dBm
ISSN: 0305-6120
Article publication date: 22 February 2021
Issue publication date: 23 March 2022
Abstract
Purpose
The purpose of this paper is to implement a highly linear 180 nm complementary metal oxide semiconductor (CMOS) power amplifier (PA) to meet the stringent linearity requirement of an long term evolution (LTE) signal with minimum trade-off to power added efficiency (PAE).
Design/methodology/approach
The CMOS PA is designed in a cascaded dual-stage configuration comprises a driver amplifier and a main PA. The gate voltage (VGS) of the driver amplifier is tuned to optimize its positive third-order transconductance (gm3) to be canceled with the main PA’s fixed negative gm3. The gm3 cancellation between these stages mitigates the third-order intermodulation product (IMD3) that contributes to enhanced linearity.
Findings
For driver’s VGS of 0.82 V with continuous wave signal, the proposed PA achieved a power gain of 14.5 dB with a peak PAE of 31.8% and a saturated output power of 23.3 dBm at 2.45 GHz. A maximum third-order output intercept point of 34 dBm is achieved at 20.2 dBm output power with a corresponding IMD3 of −33.4 dBc. When tested with a 20 MHz LTE signal, the PA delivers 19 dBm maximum linear output power for an adjacent channel leakage ratio specification of −30 dBc.
Originality/value
In this study, a novel cascaded gm3 cancellation technique has been implemented to achieve a maximum linear output power under modulated signals.
Keywords
Acknowledgements
This research work is supported and funded by SilTerra Sdn. Bhd., USM RUI Grant (1001/PCEDEC/8014079), MOHE FRGS Grant (1001/PCEDEC/6071449) and Collaborative Research in Engineering, Science and Technology (CREST) (304/PELECT/6050378/C121).
Citation
Mariappan, S., Rajendran, J., Mohd Noh, N., Yusof, Y. and Kumar, N. (2022), "A 23.3 dBm CMOS power amplifier with third-order gm cancellation linearization technique achieving OIP3 of 34 dBm", Circuit World, Vol. 48 No. 2, pp. 215-222. https://doi.org/10.1108/CW-08-2020-0209
Publisher
:Emerald Publishing Limited
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