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Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films

  • SPECTROSCOPY, INTERACTION WITH RADIATION
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Abstract

Radiation-induced effects in Cu(In,Ga)Se2 alloy thin films after implantation with hydrogen ions with energies of 2.5, 5, and 10 keV and a dose of ~3 × 1015 cm–2 are studied. Comparative analysis of the optical characteristics of nonimplanted and hydrogen-implanted Cu(In,Ga)Se2 films is conducted on the basis of photoluminescence spectra and luminescence-excitation spectra recorded at liquid-helium temperature (~4.2 K). The band gap determined for Cu(In,Ga)Se2 alloys by mathematical processing of the luminescence-excitation spectra is ~1.171 eV. In the photoluminescence spectra of nonimplanted and hydrogen-implanted Cu(In,Ga)Se2 films, an intense band is detected, with a maximum at ~1.089 eV. The band is defined by the recombination of free electrons with holes localized in the valence-band tails. It is established that broad bands with maximums at the energies 0.92 and ~0.77 eV are defined by the radiative recombination of nonequilibrium charge carriers at deep energy levels of ion-induced acceptor defects formed in the band gap of Cu(In,Ga)Se2 alloys. The conditions for the effect of the ion passivation of dangling electron bonds at the surface and in the bulk of polycrystalline Cu(In,Ga)Se2 films and the nature of structural point defects and the mechanisms of radiative recombination are discussed.

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Funding

The study was supported by the Belarusian Republican Foundation of Basic Research, project no. F20M-058, state program of scientific research “Physical Material Science, New Materials and Technologies”, subprogram “Nanomaterials and Nanotechnologies”–2.56, and the Ministry of Education and Science of Russia, government order, project “Spin” no. AAAA-A18-118020290104-2.

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Authors and Affiliations

  1. Scientific-Practical Materials Research Center, National Academy of Sciences of Belarus, 220072, Minsk, Belarus

    O. M. Borodavchenko, V. D. Zhivulko & A. V. Mudryí

  2. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 620108, Yekaterinburg, Russia

    M. V. Yakushev & I. A. Mogilnikov

  3. Ural Federal University, 620002, Yekaterinburg, Russia

    M. V. Yakushev

Authors
  1. O. M. Borodavchenko
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  2. V. D. Zhivulko
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  3. A. V. Mudryí
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  4. M. V. Yakushev
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  5. I. A. Mogilnikov
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Correspondence to O. M. Borodavchenko.

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Translated by E. Smorgonskaya

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Borodavchenko, O.M., Zhivulko, V.D., Mudryí, A.V. et al. Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films. Semiconductors 55, 168–174 (2021). https://doi.org/10.1134/S1063782621020093

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  • DOI: https://doi.org/10.1134/S1063782621020093

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