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To the Inhomogeneous Bulk State of the Bi1.08Sn0.02Sb0.9Te2S Topological Insulator as Revealed by ESR of Charge Carriers

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We report the first observation of electron spin resonance of the bulk charge carriers in 3D topological insulator Bi1.08Sn0.02Sb0.9Te2S. The observed spectra represent the overlay of two different signals from electrons and holes with the g-factors enormously enhanced due to strong spin–orbit coupling typical of topological insulators. The analysis of the ESR lines indicates that the current carriers responsible for the resonance may be organized in electron and hole nanodroplets. It is not excluded that such droplets when residing near the surface may give rise to nonzero back scattering of surface current carriers.

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Funding

This work was supported in part by the Russian Foundation for Basic Research, project no. 20-02-00910.

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  1. Zavoisky Physical-Technical Institute, Russian Academy of Sciences, 420029, Kazan, Russia

    V. Sakhin, E. Kukovitsky, Yu. Talanov & G. Teitel’baum

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  1. V. Sakhin
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  2. E. Kukovitsky
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  3. Yu. Talanov
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  4. G. Teitel’baum
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Correspondence to G. Teitel’baum.

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Sakhin, V., Kukovitsky, E., Talanov, Y. et al. To the Inhomogeneous Bulk State of the Bi1.08Sn0.02Sb0.9Te2S Topological Insulator as Revealed by ESR of Charge Carriers. Jetp Lett. 113, 273–278 (2021). https://doi.org/10.1134/S0021364021040044

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